Abstract
Application of femtosecond transient absorption in the visible and near-IR spectral ranges and time-resolved photoluminescence allows us to separate electron and hole relaxation paths and to map the structure of interband and intraband optical transitions in CdSe and CdS nanocrystals (NC's) with a wide range of surface properties. In contrast to electron relaxation, which is controlled by NC surface passivation, depopulation of hole quantized states is extremely fast (sub-ps-to-ps time scales) in all types samples, independent of NC surface treatment (including NC's overcoated with a ZnS layer). Our results suggest that ultrafast hole dynamics are not due to trapping at localized surface defects such as a vacancy, but rather arise from relaxation into intrinsic NC states or intrinsically unpassivated interface states.
| Original language | English |
|---|---|
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 60 |
| Issue number | 4 |
| Publication status | Published - Jul 15 1999 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Ultrafast dynamics of inter- and intraband transitions in semiconductor nanocrystals : Implications for quantum-dot lasers. / Klimov, Victor I; Schwarz, Ch J.; McBranch, D. W.; Leatherdale, C. A.; Bawendi, M. G.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 60, No. 4, 15.07.1999.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultrafast dynamics of inter- and intraband transitions in semiconductor nanocrystals
T2 - Implications for quantum-dot lasers
AU - Klimov, Victor I
AU - Schwarz, Ch J.
AU - McBranch, D. W.
AU - Leatherdale, C. A.
AU - Bawendi, M. G.
PY - 1999/7/15
Y1 - 1999/7/15
N2 - Application of femtosecond transient absorption in the visible and near-IR spectral ranges and time-resolved photoluminescence allows us to separate electron and hole relaxation paths and to map the structure of interband and intraband optical transitions in CdSe and CdS nanocrystals (NC's) with a wide range of surface properties. In contrast to electron relaxation, which is controlled by NC surface passivation, depopulation of hole quantized states is extremely fast (sub-ps-to-ps time scales) in all types samples, independent of NC surface treatment (including NC's overcoated with a ZnS layer). Our results suggest that ultrafast hole dynamics are not due to trapping at localized surface defects such as a vacancy, but rather arise from relaxation into intrinsic NC states or intrinsically unpassivated interface states.
AB - Application of femtosecond transient absorption in the visible and near-IR spectral ranges and time-resolved photoluminescence allows us to separate electron and hole relaxation paths and to map the structure of interband and intraband optical transitions in CdSe and CdS nanocrystals (NC's) with a wide range of surface properties. In contrast to electron relaxation, which is controlled by NC surface passivation, depopulation of hole quantized states is extremely fast (sub-ps-to-ps time scales) in all types samples, independent of NC surface treatment (including NC's overcoated with a ZnS layer). Our results suggest that ultrafast hole dynamics are not due to trapping at localized surface defects such as a vacancy, but rather arise from relaxation into intrinsic NC states or intrinsically unpassivated interface states.
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M3 - Article
AN - SCOPUS:0000433647
VL - 60
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 1098-0121
IS - 4
ER -