Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods

Daniel B. Tice, Shi Qiang Li, Mario Tagliazucchi, D. Bruce Buchholz, Emily A. Weiss, Robert P H Chang

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

Original languageEnglish
Pages (from-to)1120-1126
Number of pages7
JournalNano Letters
Volume14
Issue number3
DOIs
Publication statusPublished - Mar 12 2014

Fingerprint

Surface plasmon resonance
plasma frequencies
Tin oxides
surface plasmon resonance
indium oxides
Indium
tin oxides
rods
Modulation
Plasmas
modulation
Harmonic generation
harmonic generations
fluence
Conduction bands
ultraviolet radiation
Experiments
probes
conduction bands
Electric fields

Keywords

  • carrier injection
  • doped semiconductors
  • Localized surface plasmons
  • third harmonic generation
  • transient absorption
  • ultrafast optical modulation

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods. / Tice, Daniel B.; Li, Shi Qiang; Tagliazucchi, Mario; Buchholz, D. Bruce; Weiss, Emily A.; Chang, Robert P H.

In: Nano Letters, Vol. 14, No. 3, 12.03.2014, p. 1120-1126.

Research output: Contribution to journalArticle

Tice, Daniel B. ; Li, Shi Qiang ; Tagliazucchi, Mario ; Buchholz, D. Bruce ; Weiss, Emily A. ; Chang, Robert P H. / Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods. In: Nano Letters. 2014 ; Vol. 14, No. 3. pp. 1120-1126.
@article{4c727f56f1d3405988c54607d2a117fe,
title = "Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods",
abstract = "Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13{\%} were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.",
keywords = "carrier injection, doped semiconductors, Localized surface plasmons, third harmonic generation, transient absorption, ultrafast optical modulation",
author = "Tice, {Daniel B.} and Li, {Shi Qiang} and Mario Tagliazucchi and Buchholz, {D. Bruce} and Weiss, {Emily A.} and Chang, {Robert P H}",
year = "2014",
month = "3",
day = "12",
doi = "10.1021/nl4028044",
language = "English",
volume = "14",
pages = "1120--1126",
journal = "Nano Letters",
issn = "1530-6984",
publisher = "American Chemical Society",
number = "3",

}

TY - JOUR

T1 - Ultrafast modulation of the plasma frequency of vertically aligned indium tin oxide rods

AU - Tice, Daniel B.

AU - Li, Shi Qiang

AU - Tagliazucchi, Mario

AU - Buchholz, D. Bruce

AU - Weiss, Emily A.

AU - Chang, Robert P H

PY - 2014/3/12

Y1 - 2014/3/12

N2 - Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

AB - Light-matter interaction at the nanoscale is of particular interest for future photonic integrated circuits and devices with applications ranging from communication to sensing and imaging. In this Letter a combination of transient absorption (TA) and the use of third harmonic generation as a probe (THG-probe) has been adopted to investigate the response of the localized surface plasmon resonances (LSPRs) of vertically aligned indium tin oxide rods (ITORs) upon ultraviolet light (UV) excitation. TA experiments, which are sensitive to the extinction of the LSPR, show a fluence-dependent increase in the frequency and intensity of the LSPR. The THG-probe experiments show a fluence-dependent decrease of the LSPR-enhanced local electric field intensity within the rod, consistent with a shift of the LSPR to higher frequency. The kinetics from both TA and THG-probe experiments are found to be independent of the fluence of the pump. These results indicate that UV excitation modulates the plasma frequency of ITO on the ultrafast time scale by the injection of electrons into, and their subsequent decay from, the conduction band of the rods. Increases to the electron concentration in the conduction band of ∼13% were achieved in these experiments. Computer simulation and modeling have been used throughout the investigation to guide the design of the experiments and to map the electric field distribution around the rods for interpreting far-field measurement results.

KW - carrier injection

KW - doped semiconductors

KW - Localized surface plasmons

KW - third harmonic generation

KW - transient absorption

KW - ultrafast optical modulation

UR - http://www.scopus.com/inward/record.url?scp=84896343514&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84896343514&partnerID=8YFLogxK

U2 - 10.1021/nl4028044

DO - 10.1021/nl4028044

M3 - Article

VL - 14

SP - 1120

EP - 1126

JO - Nano Letters

JF - Nano Letters

SN - 1530-6984

IS - 3

ER -