Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Li Dong Zhao, Gangjian Tan, Shiqiang Hao, Jiaqing He, Yanling Pei, Hang Chi, Heng Wang, Shengkai Gong, Huibin Xu, Vinayak P. Dravid, Ctirad Uher, G. Jeffrey Snyder, Chris Wolverton, Mercouri G. Kanatzidis

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Abstract

Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally friendly means of energy savings and power generation. The thermoelectric efficiency is determined by the device dimensionless figure of merit ZTdev, and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Here, we report a record high ZTdev ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals. The exceptional performance arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.

Original languageEnglish
Pages (from-to)141-144
Number of pages4
JournalScience
Volume351
Issue number6269
DOIs
Publication statusPublished - Jan 8 2016

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Cite this

Zhao, L. D., Tan, G., Hao, S., He, J., Pei, Y., Chi, H., Wang, H., Gong, S., Xu, H., Dravid, V. P., Uher, C., Snyder, G. J., Wolverton, C., & Kanatzidis, M. G. (2016). Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. Science, 351(6269), 141-144. https://doi.org/10.1126/science.aad3749