Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Li Dong Zhao; Gangjian Tan; Shiqiang Hao; Jiaqing He; Yanling Pei; Hang Chi; Heng Wang; Shengkai Gong; Huibin Xu; Vinayak P. Dravid; Ctirad Uher; G. Jeffrey Snyder; Chris Wolverton; Mercouri G. Kanatzidis

doi:10.1126/science.aad3749

Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe

Li Dong Zhao, Gangjian Tan, Shiqiang Hao, Jiaqing He, Yanling Pei, Hang Chi, Heng Wang, Shengkai Gong, Huibin Xu, Vinayak P. Dravid, Ctirad Uher, G. Jeffrey Snyder, Chris Wolverton, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article › peer-review

929 Citations (Scopus)

Abstract

Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally friendly means of energy savings and power generation. The thermoelectric efficiency is determined by the device dimensionless figure of merit ZT_dev, and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Here, we report a record high ZT_dev ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals. The exceptional performance arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.

Original language	English
Pages (from-to)	141-144
Number of pages	4
Journal	Science
Volume	351
Issue number	6269
DOIs	https://doi.org/10.1126/science.aad3749
Publication status	Published - Jan 8 2016

ASJC Scopus subject areas

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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. / Zhao, Li Dong; Tan, Gangjian; Hao, Shiqiang; He, Jiaqing; Pei, Yanling; Chi, Hang; Wang, Heng; Gong, Shengkai; Xu, Huibin; Dravid, Vinayak P.; Uher, Ctirad; Snyder, G. Jeffrey; Wolverton, Chris; Kanatzidis, Mercouri G.

In: Science, Vol. 351, No. 6269, 08.01.2016, p. 141-144.

Research output: Contribution to journal › Article › peer-review

Zhao, Li Dong ; Tan, Gangjian ; Hao, Shiqiang ; He, Jiaqing ; Pei, Yanling ; Chi, Hang ; Wang, Heng ; Gong, Shengkai ; Xu, Huibin ; Dravid, Vinayak P. ; Uher, Ctirad ; Snyder, G. Jeffrey ; Wolverton, Chris ; Kanatzidis, Mercouri G. / Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe. In: Science. 2016 ; Vol. 351, No. 6269. pp. 141-144.

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abstract = "Thermoelectric technology, harvesting electric power directly from heat, is a promising environmentally friendly means of energy savings and power generation. The thermoelectric efficiency is determined by the device dimensionless figure of merit ZTdev, and optimizing this efficiency requires maximizing ZT values over a broad temperature range. Here, we report a record high ZTdev ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals. The exceptional performance arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe. SnSe is a robust thermoelectric candidate for energy conversion applications in the low and moderate temperature range.",

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