Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Shumao Cui, Haihui Pu, Spencer A. Wells, Zhenhai Wen, Shun Mao, Jingbo Chang, Mark C Hersam, Junhong Chen

Research output: Contribution to journalArticle

260 Citations (Scopus)

Abstract

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).

Original languageEnglish
Article number8632
JournalNature Communications
Volume6
DOIs
Publication statusPublished - Oct 21 2015

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ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Chemistry(all)
  • Physics and Astronomy(all)

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