Abstract
Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).
| Original language | English |
|---|---|
| Article number | 8632 |
| Journal | Nature Communications |
| Volume | 6 |
| DOIs | |
| Publication status | Published - Oct 21 2015 |
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ASJC Scopus subject areas
- Biochemistry, Genetics and Molecular Biology(all)
- Chemistry(all)
- Physics and Astronomy(all)
Cite this
Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors. / Cui, Shumao; Pu, Haihui; Wells, Spencer A.; Wen, Zhenhai; Mao, Shun; Chang, Jingbo; Hersam, Mark C; Chen, Junhong.
In: Nature Communications, Vol. 6, 8632, 21.10.2015.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors
AU - Cui, Shumao
AU - Pu, Haihui
AU - Wells, Spencer A.
AU - Wen, Zhenhai
AU - Mao, Shun
AU - Chang, Jingbo
AU - Hersam, Mark C
AU - Chen, Junhong
PY - 2015/10/21
Y1 - 2015/10/21
N2 - Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).
AB - Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).
UR - http://www.scopus.com/inward/record.url?scp=84944896487&partnerID=8YFLogxK
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U2 - 10.1038/ncomms9632
DO - 10.1038/ncomms9632
M3 - Article
AN - SCOPUS:84944896487
VL - 6
JO - Nature Communications
JF - Nature Communications
SN - 2041-1723
M1 - 8632
ER -