Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Shumao Cui, Haihui Pu, Spencer A. Wells, Zhenhai Wen, Shun Mao, Jingbo Chang, Mark C Hersam, Junhong Chen

Research output: Contribution to journalArticle

208 Citations (Scopus)

Abstract

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).

Original languageEnglish
Article number8632
JournalNature Communications
Volume6
DOIs
Publication statusPublished - Oct 21 2015

Fingerprint

Nanosheets
Chemical sensors
Gases
Equipment and Supplies
sensitivity
sensors
Thermodynamics
gases
Adsorption
Air
Temperature
Statistical mechanics
Sensors
Field effect transistors
Energy gap
field effect transistors
thermodynamics
adsorption
air
room temperature

ASJC Scopus subject areas

  • Biochemistry, Genetics and Molecular Biology(all)
  • Chemistry(all)
  • Physics and Astronomy(all)

Cite this

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors. / Cui, Shumao; Pu, Haihui; Wells, Spencer A.; Wen, Zhenhai; Mao, Shun; Chang, Jingbo; Hersam, Mark C; Chen, Junhong.

In: Nature Communications, Vol. 6, 8632, 21.10.2015.

Research output: Contribution to journalArticle

Cui, Shumao ; Pu, Haihui ; Wells, Spencer A. ; Wen, Zhenhai ; Mao, Shun ; Chang, Jingbo ; Hersam, Mark C ; Chen, Junhong. / Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors. In: Nature Communications. 2015 ; Vol. 6.
@article{0113b62f526c40b98226af0a904d0398,
title = "Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors",
abstract = "Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190{\%} at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).",
author = "Shumao Cui and Haihui Pu and Wells, {Spencer A.} and Zhenhai Wen and Shun Mao and Jingbo Chang and Hersam, {Mark C} and Junhong Chen",
year = "2015",
month = "10",
day = "21",
doi = "10.1038/ncomms9632",
language = "English",
volume = "6",
journal = "Nature Communications",
issn = "2041-1723",
publisher = "Nature Publishing Group",

}

TY - JOUR

T1 - Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

AU - Cui, Shumao

AU - Pu, Haihui

AU - Wells, Spencer A.

AU - Wen, Zhenhai

AU - Mao, Shun

AU - Chang, Jingbo

AU - Hersam, Mark C

AU - Chen, Junhong

PY - 2015/10/21

Y1 - 2015/10/21

N2 - Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).

AB - Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (10nm).

UR - http://www.scopus.com/inward/record.url?scp=84944896487&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84944896487&partnerID=8YFLogxK

U2 - 10.1038/ncomms9632

DO - 10.1038/ncomms9632

M3 - Article

VL - 6

JO - Nature Communications

JF - Nature Communications

SN - 2041-1723

M1 - 8632

ER -