Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Shumao Cui; Haihui Pu; Spencer A. Wells; Zhenhai Wen; Shun Mao; Jingbo Chang; Mark C. Hersam; Junhong Chen

doi:10.1038/ncomms9632

Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors

Shumao Cui, Haihui Pu, Spencer A. Wells, Zhenhai Wen, Shun Mao, Jingbo Chang, Mark C. Hersam, Junhong Chen

Northwestern University

Research output: Contribution to journal › Article › peer-review

349 Citations (Scopus)

Abstract

Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10nm) and by the effective thickness on gas adsorption for thicker sheets (>10nm).

Original language	English
Article number	8632
Journal	Nature communications
Volume	6
DOIs	https://doi.org/10.1038/ncomms9632
Publication status	Published - Oct 21 2015

ASJC Scopus subject areas

Chemistry(all)
Biochemistry, Genetics and Molecular Biology(all)
Physics and Astronomy(all)

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title = "Ultrahigh sensitivity and layer-dependent sensing performance of phosphorene-based gas sensors",

abstract = "Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is 1/410 15 cm '2 for the 4.8-nm-thick PNS when exposed to 20p.p.b. NO 2 at 300K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10nm) and by the effective thickness on gas adsorption for thicker sheets (>10nm).",

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AU - Chang, Jingbo

AU - Hersam, Mark C.

AU - Chen, Junhong

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