Ultrashallow defect states at SiO2 4H-SiC interfaces

S. Dhar, X. D. Chen, P. M. Mooney, J. R. Williams, Leonard C Feldman

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Abstract

Interface state density (Dit) at Si O2 4H-SiC interfaces are reported for states lying energetically within ∼0.05-0.2 eV of the conduction band edge (EC) of 4H-SiC using capacitance-voltage characterization as a function of temperature. Comparison of as-grown dry oxidized and nitrided interfaces confirms the significant reduction of Dit associated with nitridation. In the as-oxidized case (no nitridation), the Dit in the energy range ∼0.05-0.2 eV below EC is found to consist of a broad Dit peak at about ∼0.1 eV below EC with an energy width of about ∼0.2 eV and a peak magnitude of ∼2× 1013 cm-2 eV-1 superimposed on an exponentially decaying background distribution. Interfacial nitridation completely eliminates the broad peak but does not strongly affect the background.

Original languageEnglish
Article number102112
JournalApplied Physics Letters
Volume92
Issue number10
DOIs
Publication statusPublished - 2008

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Dhar, S., Chen, X. D., Mooney, P. M., Williams, J. R., & Feldman, L. C. (2008). Ultrashallow defect states at SiO2 4H-SiC interfaces. Applied Physics Letters, 92(10), [102112]. https://doi.org/10.1063/1.2898502