Abstract
Interface state density (Dit) at Si O2 4H-SiC interfaces are reported for states lying energetically within ∼0.05-0.2 eV of the conduction band edge (EC) of 4H-SiC using capacitance-voltage characterization as a function of temperature. Comparison of as-grown dry oxidized and nitrided interfaces confirms the significant reduction of Dit associated with nitridation. In the as-oxidized case (no nitridation), the Dit in the energy range ∼0.05-0.2 eV below EC is found to consist of a broad Dit peak at about ∼0.1 eV below EC with an energy width of about ∼0.2 eV and a peak magnitude of ∼2× 1013 cm-2 eV-1 superimposed on an exponentially decaying background distribution. Interfacial nitridation completely eliminates the broad peak but does not strongly affect the background.
Original language | English |
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Article number | 102112 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 10 |
DOIs | |
Publication status | Published - Mar 24 2008 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)