Ultrathin (<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

M. L. Green, E. P. Gusev, R. Degraeve, E. L. Garfunkel

Research output: Contribution to journalReview article

698 Citations (Scopus)

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Physics & Astronomy