Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C

M. L. Green, T. Sorsch, L. C. Feldman, W. N. Lennard, E. P. Gusev, E. Garfunkel, H. C. Lu, T. Gustafsson

Research output: Contribution to journalArticle

21 Citations (Scopus)

Fingerprint Dive into the research topics of 'Ultrathin SiO<sub>x</sub>N<sub>y</sub> by rapid thermal heating of silicon in N<sub>2</sub> at T=760-1050 °C'. Together they form a unique fingerprint.

Physics & Astronomy