Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C

M. L. Green, T. Sorsch, Leonard C Feldman, W. N. Lennard, E. P. Gusev, Eric Garfunkel, H. C. Lu, T. Gustafsson

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

In this letter, we report on the reaction between Si and N2 in the temperature range of 760-1050°C, in a rapid thermal processing chamber. Gas phase impurities such as H2O, O2, and H2, which can outgas from the cold walls of the chamber, mediate the Si/N2 reaction, resulting in the formation of SiOxNy. The oxynitridation can be explained by equilibrium chemical thermodynamics, in contrast to the case of oxynitridation using N2O or NO, where the nitrogen is incorporated under nonequilibrium conditions. Using nuclear reaction analysis, we have measured nitrogen contents as high as 2.5×1015 N/cm2 (the equivalent of more than 3 monolayers) in these new dielectrics. They can be reoxidized to form ultrathin (2 to 3 nm) dielectrics.

Original languageEnglish
Pages (from-to)2978-2980
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number20
Publication statusPublished - Nov 17 1997

Fingerprint

chambers
cold walls
nitrogen
nonequilibrium conditions
heating
silicon
nuclear reactions
chemical equilibrium
vapor phases
impurities
thermodynamics
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Green, M. L., Sorsch, T., Feldman, L. C., Lennard, W. N., Gusev, E. P., Garfunkel, E., ... Gustafsson, T. (1997). Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C. Applied Physics Letters, 71(20), 2978-2980.

Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C. / Green, M. L.; Sorsch, T.; Feldman, Leonard C; Lennard, W. N.; Gusev, E. P.; Garfunkel, Eric; Lu, H. C.; Gustafsson, T.

In: Applied Physics Letters, Vol. 71, No. 20, 17.11.1997, p. 2978-2980.

Research output: Contribution to journalArticle

Green, ML, Sorsch, T, Feldman, LC, Lennard, WN, Gusev, EP, Garfunkel, E, Lu, HC & Gustafsson, T 1997, 'Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C', Applied Physics Letters, vol. 71, no. 20, pp. 2978-2980.
Green, M. L. ; Sorsch, T. ; Feldman, Leonard C ; Lennard, W. N. ; Gusev, E. P. ; Garfunkel, Eric ; Lu, H. C. ; Gustafsson, T. / Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C. In: Applied Physics Letters. 1997 ; Vol. 71, No. 20. pp. 2978-2980.
@article{0e9d9c5d072b434b98e9416b4d202be5,
title = "Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C",
abstract = "In this letter, we report on the reaction between Si and N2 in the temperature range of 760-1050°C, in a rapid thermal processing chamber. Gas phase impurities such as H2O, O2, and H2, which can outgas from the cold walls of the chamber, mediate the Si/N2 reaction, resulting in the formation of SiOxNy. The oxynitridation can be explained by equilibrium chemical thermodynamics, in contrast to the case of oxynitridation using N2O or NO, where the nitrogen is incorporated under nonequilibrium conditions. Using nuclear reaction analysis, we have measured nitrogen contents as high as 2.5×1015 N/cm2 (the equivalent of more than 3 monolayers) in these new dielectrics. They can be reoxidized to form ultrathin (2 to 3 nm) dielectrics.",
author = "Green, {M. L.} and T. Sorsch and Feldman, {Leonard C} and Lennard, {W. N.} and Gusev, {E. P.} and Eric Garfunkel and Lu, {H. C.} and T. Gustafsson",
year = "1997",
month = "11",
day = "17",
language = "English",
volume = "71",
pages = "2978--2980",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

TY - JOUR

T1 - Ultrathin SiOxNy by rapid thermal heating of silicon in N2 at T=760-1050 °C

AU - Green, M. L.

AU - Sorsch, T.

AU - Feldman, Leonard C

AU - Lennard, W. N.

AU - Gusev, E. P.

AU - Garfunkel, Eric

AU - Lu, H. C.

AU - Gustafsson, T.

PY - 1997/11/17

Y1 - 1997/11/17

N2 - In this letter, we report on the reaction between Si and N2 in the temperature range of 760-1050°C, in a rapid thermal processing chamber. Gas phase impurities such as H2O, O2, and H2, which can outgas from the cold walls of the chamber, mediate the Si/N2 reaction, resulting in the formation of SiOxNy. The oxynitridation can be explained by equilibrium chemical thermodynamics, in contrast to the case of oxynitridation using N2O or NO, where the nitrogen is incorporated under nonequilibrium conditions. Using nuclear reaction analysis, we have measured nitrogen contents as high as 2.5×1015 N/cm2 (the equivalent of more than 3 monolayers) in these new dielectrics. They can be reoxidized to form ultrathin (2 to 3 nm) dielectrics.

AB - In this letter, we report on the reaction between Si and N2 in the temperature range of 760-1050°C, in a rapid thermal processing chamber. Gas phase impurities such as H2O, O2, and H2, which can outgas from the cold walls of the chamber, mediate the Si/N2 reaction, resulting in the formation of SiOxNy. The oxynitridation can be explained by equilibrium chemical thermodynamics, in contrast to the case of oxynitridation using N2O or NO, where the nitrogen is incorporated under nonequilibrium conditions. Using nuclear reaction analysis, we have measured nitrogen contents as high as 2.5×1015 N/cm2 (the equivalent of more than 3 monolayers) in these new dielectrics. They can be reoxidized to form ultrathin (2 to 3 nm) dielectrics.

UR - http://www.scopus.com/inward/record.url?scp=0008385378&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008385378&partnerID=8YFLogxK

M3 - Article

VL - 71

SP - 2978

EP - 2980

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

ER -