Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films

H. Cao, Y. G. Zhao, H. C. Ong, S. T. Ho, J. Y. Dai, J. Y. Wu, Robert P. H. Chang

Research output: Contribution to journalArticle

453 Citations (Scopus)

Abstract

A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission.

Original languageEnglish
Pages (from-to)3656-3658
Number of pages3
JournalApplied Physics Letters
Volume73
Issue number25
DOIs
Publication statusPublished - 1998

Fingerprint

laser cavities
lasing
resonators
coherent light
optical pumping
scattering
zinc oxides
light emission
oxide films
semiconductor lasers
silicon dioxide
microstructure
wavelengths
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films. / Cao, H.; Zhao, Y. G.; Ong, H. C.; Ho, S. T.; Dai, J. Y.; Wu, J. Y.; Chang, Robert P. H.

In: Applied Physics Letters, Vol. 73, No. 25, 1998, p. 3656-3658.

Research output: Contribution to journalArticle

Cao, H. ; Zhao, Y. G. ; Ong, H. C. ; Ho, S. T. ; Dai, J. Y. ; Wu, J. Y. ; Chang, Robert P. H. / Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films. In: Applied Physics Letters. 1998 ; Vol. 73, No. 25. pp. 3656-3658.
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