Uniform patterned growth of carbon nanotubes without surface carbon

K. B.K. Teo, M. Chhowalla, G. A.J. Amaratunga, W. I. Milne, D. G. Hasko, G. Pirio, P. Legagneux, F. Wyczisk, D. Pribat

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Abstract

In order to utilize the unique properties of carbon nanotubes in microelectronic devices, it is necessary to develop a technology which enables high yield, uniform, and preferential growth of perfectly aligned nanotubes. We demonstrate such a technology by using plasma-enhanced chemical-vapor deposition (PECVD) of carbon nanotubes. By patterning the nickel catalyst, we have deposited uniform arrays of nanotubes and single free-standing aligned nanotubes at precise locations. In the PECVD process, however, detrimental amorphous carbon (a-C) is also deposited over regions of the substrate surface where the catalyst is absent. Here, we show, using depth-resolved Auger electron spectroscopy, that by employing a suitable deposition (acetylene, C2H2) to etching (ammonia, NH3) gas ratio, it is possible to obtain nanotube growth without the presence of a-C on the substrate surface.

Original languageEnglish
Pages (from-to)1534-1536
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number10
DOIs
Publication statusPublished - Sep 3 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Teo, K. B. K., Chhowalla, M., Amaratunga, G. A. J., Milne, W. I., Hasko, D. G., Pirio, G., Legagneux, P., Wyczisk, F., & Pribat, D. (2001). Uniform patterned growth of carbon nanotubes without surface carbon. Applied Physics Letters, 79(10), 1534-1536. https://doi.org/10.1063/1.1400085