Universal size-dependent trend in auger recombination in direct-gap and indirect-gap semiconductor nanocrystals

István Robel, Ryan Gresback, Uwe Kortshagen, Richard D. Schaller, Victor I. Klimov

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We report the first experimental observation of a striking convergence of Auger recombination rates in nanocrystals of both direct- (InAs, PbSe, CdSe) and indirect-gap (Ge) semiconductors, which is in contrast to a dramatic difference (by up to 4-5 orders of magnitude) in the Auger decay rates in respective bulk solids. To rationalize this finding, we invoke the effect of confinement-induced mixing between states with different translational momenta, which diminishes the impact of the bulk-semiconductor band structure on multiexciton interactions in nanocrystalline materials.

Original languageEnglish
Article number177404
JournalPhysical review letters
Issue number17
Publication statusPublished - May 1 2009


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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