Universal size-dependent trend in auger recombination in direct-gap and indirect-gap semiconductor nanocrystals

István Robel, Ryan Gresback, Uwe Kortshagen, Richard D Schaller, Victor I Klimov

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193 Citations (Scopus)

Abstract

We report the first experimental observation of a striking convergence of Auger recombination rates in nanocrystals of both direct- (InAs, PbSe, CdSe) and indirect-gap (Ge) semiconductors, which is in contrast to a dramatic difference (by up to 4-5 orders of magnitude) in the Auger decay rates in respective bulk solids. To rationalize this finding, we invoke the effect of confinement-induced mixing between states with different translational momenta, which diminishes the impact of the bulk-semiconductor band structure on multiexciton interactions in nanocrystalline materials.

Original languageEnglish
Article number177404
JournalPhysical Review Letters
Volume102
Issue number17
DOIs
Publication statusPublished - May 1 2009

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nanocrystals
trends
decay rates
momentum
interactions

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Universal size-dependent trend in auger recombination in direct-gap and indirect-gap semiconductor nanocrystals. / Robel, István; Gresback, Ryan; Kortshagen, Uwe; Schaller, Richard D; Klimov, Victor I.

In: Physical Review Letters, Vol. 102, No. 17, 177404, 01.05.2009.

Research output: Contribution to journalArticle

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