Universality of non-Ohmic shunt leakage in thin-film solar cells

S. Dongaonkar, J. D. Servaites, G. M. Ford, S. Loser, J. Moore, R. M. Gelfand, H. Mohseni, H. W. Hillhouse, R. Agrawal, Mark A Ratner, Tobin J Marks, M. S. Lundstrom, M. A. Alam

Research output: Contribution to journalArticle

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Abstract

We compare the dark current-voltage (IV) characteristics of three different thin-film solar cell types: hydrogenated amorphous silicon (a-Si:H) p-i-n cells, organic bulk heterojunction (BHJ) cells, and Cu (In,Ga) Se2 (CIGS) cells. All three device types exhibit a significant shunt leakage current at low forward bias (Vh), across all three solar cell types considered, is characterized by the following common phenomenological features: (a) voltage symmetry about V=0, (b) nonlinear (power law) voltage dependence, and (c) extremely weak temperature dependence. Based on this analysis, we provide a simple method of subtracting this shunt current component from the measured data and discuss its implications on dark IV parameter extraction. We propose a space charge limited (SCL) current model for capturing all these features of the shunt leakage in a consistent framework and discuss possible physical origin of the parasitic paths responsible for this shunt current mechanism.

Original languageEnglish
Article number124509
JournalJournal of Applied Physics
Volume108
Issue number12
DOIs
Publication statusPublished - Dec 15 2010

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shunts
leakage
solar cells
thin films
electric potential
cells
dark current
amorphous silicon
heterojunctions
space charge
temperature dependence
symmetry

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Dongaonkar, S., Servaites, J. D., Ford, G. M., Loser, S., Moore, J., Gelfand, R. M., ... Alam, M. A. (2010). Universality of non-Ohmic shunt leakage in thin-film solar cells. Journal of Applied Physics, 108(12), [124509]. https://doi.org/10.1063/1.3518509

Universality of non-Ohmic shunt leakage in thin-film solar cells. / Dongaonkar, S.; Servaites, J. D.; Ford, G. M.; Loser, S.; Moore, J.; Gelfand, R. M.; Mohseni, H.; Hillhouse, H. W.; Agrawal, R.; Ratner, Mark A; Marks, Tobin J; Lundstrom, M. S.; Alam, M. A.

In: Journal of Applied Physics, Vol. 108, No. 12, 124509, 15.12.2010.

Research output: Contribution to journalArticle

Dongaonkar, S, Servaites, JD, Ford, GM, Loser, S, Moore, J, Gelfand, RM, Mohseni, H, Hillhouse, HW, Agrawal, R, Ratner, MA, Marks, TJ, Lundstrom, MS & Alam, MA 2010, 'Universality of non-Ohmic shunt leakage in thin-film solar cells', Journal of Applied Physics, vol. 108, no. 12, 124509. https://doi.org/10.1063/1.3518509
Dongaonkar S, Servaites JD, Ford GM, Loser S, Moore J, Gelfand RM et al. Universality of non-Ohmic shunt leakage in thin-film solar cells. Journal of Applied Physics. 2010 Dec 15;108(12). 124509. https://doi.org/10.1063/1.3518509
Dongaonkar, S. ; Servaites, J. D. ; Ford, G. M. ; Loser, S. ; Moore, J. ; Gelfand, R. M. ; Mohseni, H. ; Hillhouse, H. W. ; Agrawal, R. ; Ratner, Mark A ; Marks, Tobin J ; Lundstrom, M. S. ; Alam, M. A. / Universality of non-Ohmic shunt leakage in thin-film solar cells. In: Journal of Applied Physics. 2010 ; Vol. 108, No. 12.
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