Unveiling hole trapping and surface dynamics of NiO nanoparticles

Luca D'Amario, Jens Föhlinger, Gerrit Boschloo, Leif Hammarström

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The research effort in mesoporous p-type semiconductors is increasing due to their potential application in photoelectrochemical energy conversion devices. In this paper an electron-hole pair is created by band-gap excitation of NiO nanoparticles and the dynamics of the electron and the hole is followed until their recombination. By spectroscopic characterization it was found that surface Ni3+ states work as traps for both electrons and holes. The trapped electron was assigned to a Ni2+ state and the trapped hole to a "Ni4+" state positioned close to the valence band edge. The recombination kinetics of these traps was studied and related with the concept of hole relaxation suggested before. The time scale of the hole relaxation was found to be in the order of tens of ns. Finally the spectroscopic evidence of this relaxation is presented in a sensitized film.

Original languageEnglish
Pages (from-to)223-230
Number of pages8
JournalChemical Science
Volume9
Issue number1
DOIs
Publication statusPublished - Jan 1 2017

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Nanoparticles
Electrons
Surface states
Valence bands
Energy conversion
Energy gap
Semiconductor materials
Kinetics

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Unveiling hole trapping and surface dynamics of NiO nanoparticles. / D'Amario, Luca; Föhlinger, Jens; Boschloo, Gerrit; Hammarström, Leif.

In: Chemical Science, Vol. 9, No. 1, 01.01.2017, p. 223-230.

Research output: Contribution to journalArticle

D'Amario, Luca ; Föhlinger, Jens ; Boschloo, Gerrit ; Hammarström, Leif. / Unveiling hole trapping and surface dynamics of NiO nanoparticles. In: Chemical Science. 2017 ; Vol. 9, No. 1. pp. 223-230.
@article{7285f47b7b334e82b8c269c3f1a3c112,
title = "Unveiling hole trapping and surface dynamics of NiO nanoparticles",
abstract = "The research effort in mesoporous p-type semiconductors is increasing due to their potential application in photoelectrochemical energy conversion devices. In this paper an electron-hole pair is created by band-gap excitation of NiO nanoparticles and the dynamics of the electron and the hole is followed until their recombination. By spectroscopic characterization it was found that surface Ni3+ states work as traps for both electrons and holes. The trapped electron was assigned to a Ni2+ state and the trapped hole to a {"}Ni4+{"} state positioned close to the valence band edge. The recombination kinetics of these traps was studied and related with the concept of hole relaxation suggested before. The time scale of the hole relaxation was found to be in the order of tens of ns. Finally the spectroscopic evidence of this relaxation is presented in a sensitized film.",
author = "Luca D'Amario and Jens F{\"o}hlinger and Gerrit Boschloo and Leif Hammarstr{\"o}m",
year = "2017",
month = "1",
day = "1",
doi = "10.1039/c7sc03442c",
language = "English",
volume = "9",
pages = "223--230",
journal = "Chemical Science",
issn = "2041-6520",
publisher = "Royal Society of Chemistry",
number = "1",

}

TY - JOUR

T1 - Unveiling hole trapping and surface dynamics of NiO nanoparticles

AU - D'Amario, Luca

AU - Föhlinger, Jens

AU - Boschloo, Gerrit

AU - Hammarström, Leif

PY - 2017/1/1

Y1 - 2017/1/1

N2 - The research effort in mesoporous p-type semiconductors is increasing due to their potential application in photoelectrochemical energy conversion devices. In this paper an electron-hole pair is created by band-gap excitation of NiO nanoparticles and the dynamics of the electron and the hole is followed until their recombination. By spectroscopic characterization it was found that surface Ni3+ states work as traps for both electrons and holes. The trapped electron was assigned to a Ni2+ state and the trapped hole to a "Ni4+" state positioned close to the valence band edge. The recombination kinetics of these traps was studied and related with the concept of hole relaxation suggested before. The time scale of the hole relaxation was found to be in the order of tens of ns. Finally the spectroscopic evidence of this relaxation is presented in a sensitized film.

AB - The research effort in mesoporous p-type semiconductors is increasing due to their potential application in photoelectrochemical energy conversion devices. In this paper an electron-hole pair is created by band-gap excitation of NiO nanoparticles and the dynamics of the electron and the hole is followed until their recombination. By spectroscopic characterization it was found that surface Ni3+ states work as traps for both electrons and holes. The trapped electron was assigned to a Ni2+ state and the trapped hole to a "Ni4+" state positioned close to the valence band edge. The recombination kinetics of these traps was studied and related with the concept of hole relaxation suggested before. The time scale of the hole relaxation was found to be in the order of tens of ns. Finally the spectroscopic evidence of this relaxation is presented in a sensitized film.

UR - http://www.scopus.com/inward/record.url?scp=85039155871&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85039155871&partnerID=8YFLogxK

U2 - 10.1039/c7sc03442c

DO - 10.1039/c7sc03442c

M3 - Article

VL - 9

SP - 223

EP - 230

JO - Chemical Science

JF - Chemical Science

SN - 2041-6520

IS - 1

ER -