Use of ion beam techniques to characterize thin plasma grown GaAs and GaAlAs oxide films

Research output: Contribution to journalArticle

3 Citations (Scopus)


Thin plasma grown films of GaAs oxides and GaAlAs oxides have been analyzed using the combined techniques of Rutherford backscattering, ion-induced X-rays, and nuclear resonance profiling. The stoichiometries of the films have been quantitatively determined and can be combined with other Auger profiling results to characterize the films. The ion-induced X-ray technique has been checked against other measurements to determine its accuracy. For uniform films such as these the X-ray measurements can provide accurate quantitative results.

Original languageEnglish
Pages (from-to)619-622
Number of pages4
JournalNuclear Instruments and Methods
Issue number1-3
Publication statusPublished - 1978


ASJC Scopus subject areas

  • Engineering(all)

Cite this