Use of ion beam techniques to characterize thin plasma grown GaAs and GaAlAs oxide films

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Thin plasma grown films of GaAs oxides and GaAlAs oxides have been analyzed using the combined techniques of Rutherford backscattering, ion-induced X-rays, and nuclear resonance profiling. The stoichiometries of the films have been quantitatively determined and can be combined with other Auger profiling results to characterize the films. The ion-induced X-ray technique has been checked against other measurements to determine its accuracy. For uniform films such as these the X-ray measurements can provide accurate quantitative results.

Original languageEnglish
Pages (from-to)619-622
Number of pages4
JournalNuclear Instruments and Methods
Volume149
Issue number1-3
DOIs
Publication statusPublished - 1978

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Oxides
Ion beams
Oxide films
X-Rays
Ions
Plasmas
Gamma Rays
X rays
Rutherford backscattering spectroscopy
Stoichiometry
gallium arsenide

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Use of ion beam techniques to characterize thin plasma grown GaAs and GaAlAs oxide films. / Kauffman, Robert L.; Feldman, Leonard C; Chang, Robert P. H.

In: Nuclear Instruments and Methods, Vol. 149, No. 1-3, 1978, p. 619-622.

Research output: Contribution to journalArticle

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