Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Leslie E. O'Leary, Nicholas C. Strandwitz, Christopher W. Roske, Suyeon Pyo, Bruce S. Brunschwig, Nathan S Lewis

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.

Original languageEnglish
Pages (from-to)722-726
Number of pages5
JournalJournal of Physical Chemistry Letters
Volume6
Issue number4
DOIs
Publication statusPublished - Feb 19 2015

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Atomic layer deposition
atomic layer epitaxy
chemical properties
Electronic properties
Oxides
Chemical properties
oxides
electronics
Aldehydes
aldehydes
metal oxides
Metals
Silicon
Monolayers
X ray photoelectron spectroscopy
photoelectron spectroscopy
cycles
silicon
Substrates

Keywords

  • gate oxide
  • interfacial oxidation
  • mixed monolayer
  • surface passivation
  • surface recombination velocity
  • two-step halogenation/alkylation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111). / O'Leary, Leslie E.; Strandwitz, Nicholas C.; Roske, Christopher W.; Pyo, Suyeon; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Journal of Physical Chemistry Letters, Vol. 6, No. 4, 19.02.2015, p. 722-726.

Research output: Contribution to journalArticle

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abstract = "Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.",
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AU - Strandwitz, Nicholas C.

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AU - Brunschwig, Bruce S.

AU - Lewis, Nathan S

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