Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Leslie E. O'Leary; Nicholas C. Strandwitz; Christopher W. Roske; Suyeon Pyo; Bruce S. Brunschwig; Nathan S. Lewis

doi:10.1021/jz502542a

Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Leslie E. O'Leary, Nicholas C. Strandwitz, Christopher W. Roske, Suyeon Pyo, Bruce S. Brunschwig, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al₂O₃ or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s^-1 whereas the mixed CH₃-/HC(O)CH₂CH₂-Si(111) surfaces displayed S = 25 ± 7 cm s^-1. During the ALD growth of either Al₂O₃ or MnO, both the HC(O)CH₂CH₂-Si(111) and CH₃-/HC(O)CH₂CH₂-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH₃-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH₃- and mixed CH₃-/HC(O)CH₂CH₂- functionalized Si(111) surfaces exhibited less interfacial SiO_x than was observed for ALD of metal oxides on H-Si(111) substrates.

Original language	English
Pages (from-to)	722-726
Number of pages	5
Journal	Journal of Physical Chemistry Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1021/jz502542a
Publication status	Published - Feb 19 2015

Keywords

gate oxide
interfacial oxidation
mixed monolayer
surface passivation
surface recombination velocity
two-step halogenation/alkylation

ASJC Scopus subject areas

Materials Science(all)
Physical and Theoretical Chemistry

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Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111). / O'Leary, Leslie E.; Strandwitz, Nicholas C.; Roske, Christopher W.; Pyo, Suyeon; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Journal of Physical Chemistry Letters, Vol. 6, No. 4, 19.02.2015, p. 722-726.

Research output: Contribution to journal › Article › peer-review

O'Leary, Leslie E. ; Strandwitz, Nicholas C. ; Roske, Christopher W. ; Pyo, Suyeon ; Brunschwig, Bruce S. ; Lewis, Nathan S. / Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111). In: Journal of Physical Chemistry Letters. 2015 ; Vol. 6, No. 4. pp. 722-726.

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abstract = "Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.",

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AU - Strandwitz, Nicholas C.

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AB - Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.

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