Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Leslie E. O'Leary; Nicholas C. Strandwitz; Christopher W. Roske; Suyeon Pyo; Bruce S. Brunschwig; Nathan S. Lewis

doi:10.1021/jz502542a

Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Leslie E. O'Leary, Nicholas C. Strandwitz, Christopher W. Roske, Suyeon Pyo, Bruce S. Brunschwig, Nathan S. Lewis

California Institute of Technology

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al₂O₃ or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s^-1 whereas the mixed CH₃-/HC(O)CH₂CH₂-Si(111) surfaces displayed S = 25 ± 7 cm s^-1. During the ALD growth of either Al₂O₃ or MnO, both the HC(O)CH₂CH₂-Si(111) and CH₃-/HC(O)CH₂CH₂-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH₃-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH₃- and mixed CH₃-/HC(O)CH₂CH₂- functionalized Si(111) surfaces exhibited less interfacial SiO_x than was observed for ALD of metal oxides on H-Si(111) substrates.

Original language	English
Pages (from-to)	722-726
Number of pages	5
Journal	Journal of Physical Chemistry Letters
Volume	6
Issue number	4
DOIs	https://doi.org/10.1021/jz502542a
Publication status	Published - Feb 19 2015

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Keywords

gate oxide
interfacial oxidation
mixed monolayer
surface passivation
surface recombination velocity
two-step halogenation/alkylation

ASJC Scopus subject areas

Materials Science(all)
Physical and Theoretical Chemistry

Cite this

O'Leary, L. E., Strandwitz, N. C., Roske, C. W., Pyo, S., Brunschwig, B. S., & Lewis, N. S. (2015). Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111). Journal of Physical Chemistry Letters, 6(4), 722-726. https://doi.org/10.1021/jz502542a

Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111). / O'Leary, Leslie E.; Strandwitz, Nicholas C.; Roske, Christopher W.; Pyo, Suyeon; Brunschwig, Bruce S.; Lewis, Nathan S.

In: Journal of Physical Chemistry Letters, Vol. 6, No. 4, 19.02.2015, p. 722-726.

Research output: Contribution to journal › Article

O'Leary, Leslie E. ; Strandwitz, Nicholas C. ; Roske, Christopher W. ; Pyo, Suyeon ; Brunschwig, Bruce S. ; Lewis, Nathan S. / Use of mixed CH₃-/HC(O)CH₂CH₂-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111). In: Journal of Physical Chemistry Letters. 2015 ; Vol. 6, No. 4. pp. 722-726.

@article{241e1e35e30f4a50acdeb9b9c776d42b,

title = "Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)",

abstract = "Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.",

keywords = "gate oxide, interfacial oxidation, mixed monolayer, surface passivation, surface recombination velocity, two-step halogenation/alkylation",

author = "O'Leary, {Leslie E.} and Strandwitz, {Nicholas C.} and Roske, {Christopher W.} and Suyeon Pyo and Brunschwig, {Bruce S.} and Lewis, {Nathan S.}",

year = "2015",

month = feb

day = "19",

doi = "10.1021/jz502542a",

language = "English",

volume = "6",

pages = "722--726",

journal = "Journal of Physical Chemistry Letters",

issn = "1948-7185",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

AU - O'Leary, Leslie E.

AU - Strandwitz, Nicholas C.

AU - Roske, Christopher W.

AU - Pyo, Suyeon

AU - Brunschwig, Bruce S.

AU - Lewis, Nathan S.

PY - 2015/2/19

Y1 - 2015/2/19

N2 - Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.

AB - Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.

KW - gate oxide

KW - interfacial oxidation

KW - mixed monolayer

KW - surface passivation

KW - surface recombination velocity

KW - two-step halogenation/alkylation

UR - http://www.scopus.com/inward/record.url?scp=84923354864&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84923354864&partnerID=8YFLogxK

U2 - 10.1021/jz502542a

DO - 10.1021/jz502542a

M3 - Article

AN - SCOPUS:84923354864

VL - 6

SP - 722

EP - 726

JO - Journal of Physical Chemistry Letters

JF - Journal of Physical Chemistry Letters

SN - 1948-7185

IS - 4

ER -

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