Use of mixed CH3-/HC(O)CH2CH2-Si(111) functionality to control interfacial chemical and electronic properties during the atomic-layer deposition of ultrathin oxides on Si(111)

Leslie E. O'Leary, Nicholas C. Strandwitz, Christopher W. Roske, Suyeon Pyo, Bruce S. Brunschwig, Nathan S. Lewis

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Silicon surfaces terminated with a mixed monolayer containing both a propyl aldehyde functionality and methyl groups were prepared and used to control the interfacial chemical and electronic properties of Si(111) surfaces during atomic-layer deposition (ALD) of Al2O3 or MnO. Si(111) surfaces functionalized only with the aldehyde moiety exhibited surface recombination velocities, S, of 2500 ± 600 cm s-1 whereas the mixed CH3-/HC(O)CH2CH2-Si(111) surfaces displayed S = 25 ± 7 cm s-1. During the ALD growth of either Al2O3 or MnO, both the HC(O)CH2CH2-Si(111) and CH3-/HC(O)CH2CH2-Si(111) surfaces produced increased metal oxide deposition at low cycle number, relative to H-Si(111) or CH3-Si(111) surfaces. As detected by X-ray photoelectron spectroscopy after the ALD process, the CH3- and mixed CH3-/HC(O)CH2CH2- functionalized Si(111) surfaces exhibited less interfacial SiOx than was observed for ALD of metal oxides on H-Si(111) substrates.

Original languageEnglish
Pages (from-to)722-726
Number of pages5
JournalJournal of Physical Chemistry Letters
Volume6
Issue number4
DOIs
Publication statusPublished - Feb 19 2015

Keywords

  • gate oxide
  • interfacial oxidation
  • mixed monolayer
  • surface passivation
  • surface recombination velocity
  • two-step halogenation/alkylation

ASJC Scopus subject areas

  • Materials Science(all)
  • Physical and Theoretical Chemistry

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