Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

Leonard C Feldman, P. J. Silverman, J. S. Williams, T. E. Jackman, I. Stensgaard

Research output: Contribution to journalArticle

83 Citations (Scopus)

Abstract

We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.

Original languageEnglish
Pages (from-to)1396-1399
Number of pages4
JournalPhysical Review Letters
Volume41
Issue number20
DOIs
Publication statusPublished - 1978

Fingerprint

backscattering
single crystals
scattering
crystals
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface. / Feldman, Leonard C; Silverman, P. J.; Williams, J. S.; Jackman, T. E.; Stensgaard, I.

In: Physical Review Letters, Vol. 41, No. 20, 1978, p. 1396-1399.

Research output: Contribution to journalArticle

Feldman, Leonard C ; Silverman, P. J. ; Williams, J. S. ; Jackman, T. E. ; Stensgaard, I. / Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface. In: Physical Review Letters. 1978 ; Vol. 41, No. 20. pp. 1396-1399.
@article{9acc1a089c834067aa2f601492501075,
title = "Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface",
abstract = "We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the {"}bulk{"} position between 0.1 and 1.0.",
author = "Feldman, {Leonard C} and Silverman, {P. J.} and Williams, {J. S.} and Jackman, {T. E.} and I. Stensgaard",
year = "1978",
doi = "10.1103/PhysRevLett.41.1396",
language = "English",
volume = "41",
pages = "1396--1399",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "20",

}

TY - JOUR

T1 - Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

AU - Feldman, Leonard C

AU - Silverman, P. J.

AU - Williams, J. S.

AU - Jackman, T. E.

AU - Stensgaard, I.

PY - 1978

Y1 - 1978

N2 - We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.

AB - We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.

UR - http://www.scopus.com/inward/record.url?scp=0000591696&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000591696&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.41.1396

DO - 10.1103/PhysRevLett.41.1396

M3 - Article

AN - SCOPUS:0000591696

VL - 41

SP - 1396

EP - 1399

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 20

ER -