Abstract
We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.
| Original language | English |
|---|---|
| Pages (from-to) | 1396-1399 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 41 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 1978 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface. / Feldman, Leonard C; Silverman, P. J.; Williams, J. S.; Jackman, T. E.; Stensgaard, I.
In: Physical Review Letters, Vol. 41, No. 20, 1978, p. 1396-1399.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface
AU - Feldman, Leonard C
AU - Silverman, P. J.
AU - Williams, J. S.
AU - Jackman, T. E.
AU - Stensgaard, I.
PY - 1978
Y1 - 1978
N2 - We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.
AB - We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.
UR - http://www.scopus.com/inward/record.url?scp=0000591696&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0000591696&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.41.1396
DO - 10.1103/PhysRevLett.41.1396
M3 - Article
AN - SCOPUS:0000591696
VL - 41
SP - 1396
EP - 1399
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 20
ER -