Abstract
We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.
| Original language | English |
|---|---|
| Pages (from-to) | 1396-1399 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 41 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 1978 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface'. Together they form a unique fingerprint.
Cite this
Feldman, L. C., Silverman, P. J., Williams, J. S., Jackman, T. E., & Stensgaard, I. (1978). Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface. Physical Review Letters, 41(20), 1396-1399. https://doi.org/10.1103/PhysRevLett.41.1396