Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

Leonard C Feldman; P. J. Silverman; J. S. Williams; T. E. Jackman; I. Stensgaard

doi:10.1103/PhysRevLett.41.1396

Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

Leonard C Feldman, P. J. Silverman, J. S. Williams, T. E. Jackman, I. Stensgaard

Rutgers University

Research output: Contribution to journal › Article

83 Citations (Scopus)

Abstract

We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.

Original language	English
Pages (from-to)	1396-1399
Number of pages	4
Journal	Physical Review Letters
Volume	41
Issue number	20
DOIs	https://doi.org/10.1103/PhysRevLett.41.1396
Publication status	Published - 1978

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ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Feldman, L. C., Silverman, P. J., Williams, J. S., Jackman, T. E., & Stensgaard, I. (1978). Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface. Physical Review Letters, 41(20), 1396-1399. https://doi.org/10.1103/PhysRevLett.41.1396

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Access to Document

10.1103/PhysRevLett.41.1396