Use of thin Si crystals in backscattering-channeling studies of the Si-SiO2 interface

Leonard C Feldman, P. J. Silverman, J. S. Williams, T. E. Jackman, I. Stensgaard

Research output: Contribution to journalArticle

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We report on new information obtained on the nature of the nonregistered Si layers at the Si-SiO2 interface using MeV backscattering-channeling techniques on thin Si single crystals. Analysis of the scattering intensity from the front and back surfaces of the crystal allows us to conclude that the atoms in the nonregistered monolayers have a displacement from the "bulk" position between 0.1 and 1.0.

Original languageEnglish
Pages (from-to)1396-1399
Number of pages4
JournalPhysical Review Letters
Issue number20
Publication statusPublished - 1978


ASJC Scopus subject areas

  • Physics and Astronomy(all)

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