Using a Semiconductor-to-metal transition to control optical transmission through subwavelength hole arrays

R. F. Haglund, E. U. Donev, J. Y. Suh, R. Lopez, Leonard C Feldman

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model. The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.

Original languageEnglish
Article number739135
JournalAdvances in OptoElectronics
Volume2008
DOIs
Publication statusPublished - 2008

Fingerprint

Light transmission
Transition metals
Semiconductor materials
Vanadium
Modulation
Ultrafast lasers
Precious metals
Oxides
Laser pulses
Heating
Thin films
Wavelength
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Using a Semiconductor-to-metal transition to control optical transmission through subwavelength hole arrays. / Haglund, R. F.; Donev, E. U.; Suh, J. Y.; Lopez, R.; Feldman, Leonard C.

In: Advances in OptoElectronics, Vol. 2008, 739135, 2008.

Research output: Contribution to journalArticle

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