Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors

Wei Xie, Pradyumna L. Prabhumirashi, Yasuo Nakayama, Kathryn A. McGarry, Michael L. Geier, Yuki Uragami, Kazuhiko Mase, Christopher J. Douglas, Hisao Ishii, Mark C Hersam, C. Daniel Frisbie

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

We have examined the significant enhancement of ambipolar charge injection and transport properties of bottom-contact single crystal field-effect transistors (SC-FETs) based on a new rubrene derivative, bis(trifluoromethyl)- dimethyl-rubrene (fm-rubrene), by employing carbon nanotube (CNT) electrodes. The fundamental challenge associated with fm-rubrene crystals is their deep-lying HOMO and LUMO energy levels, resulting in inefficient hole injection and suboptimal electron injection from conventional Au electrodes due to large Schottky barriers. Applying thin layers of CNT network at the charge injection interface of fm-rubrene crystals substantially reduces the contact resistance for both holes and electrons; consequently, benchmark ambipolar mobilities have been achieved, reaching 4.8 cm2 V-1 s-1 for hole transport and 4.2 cm2 V-1 s-1 for electron transport. We find that such improved injection efficiency in fm-rubrene is beneficial for ultimately unveiling its intrinsic charge transport properties so as to exceed those of its parent molecule, rubrene, in the current device architecture. Our studies suggest that CNT electrodes may provide a universal approach to ameliorate the charge injection obstacles in organic electronic devices regardless of charge carrier type, likely due to the electric field enhancement along the nanotube located at the crystal/electrode interface.

Original languageEnglish
Pages (from-to)10245-10256
Number of pages12
JournalACS Nano
Volume7
Issue number11
DOIs
Publication statusPublished - Nov 26 2013

Fingerprint

Charge injection
Carbon Nanotubes
Charge transfer
Carbon nanotubes
Transistors
transistors
carbon nanotubes
Single crystals
injection
Electrodes
electrodes
single crystals
Transport properties
Crystals
Electron injection
Contact resistance
Field effect transistors
transport properties
Charge carriers
Nanotubes

Keywords

  • ambipolar transport
  • charge injection
  • CNT
  • rubrene derivative
  • Schottky barrier

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Xie, W., Prabhumirashi, P. L., Nakayama, Y., McGarry, K. A., Geier, M. L., Uragami, Y., ... Frisbie, C. D. (2013). Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors. ACS Nano, 7(11), 10245-10256. https://doi.org/10.1021/nn4045694

Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors. / Xie, Wei; Prabhumirashi, Pradyumna L.; Nakayama, Yasuo; McGarry, Kathryn A.; Geier, Michael L.; Uragami, Yuki; Mase, Kazuhiko; Douglas, Christopher J.; Ishii, Hisao; Hersam, Mark C; Frisbie, C. Daniel.

In: ACS Nano, Vol. 7, No. 11, 26.11.2013, p. 10245-10256.

Research output: Contribution to journalArticle

Xie, W, Prabhumirashi, PL, Nakayama, Y, McGarry, KA, Geier, ML, Uragami, Y, Mase, K, Douglas, CJ, Ishii, H, Hersam, MC & Frisbie, CD 2013, 'Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors', ACS Nano, vol. 7, no. 11, pp. 10245-10256. https://doi.org/10.1021/nn4045694
Xie, Wei ; Prabhumirashi, Pradyumna L. ; Nakayama, Yasuo ; McGarry, Kathryn A. ; Geier, Michael L. ; Uragami, Yuki ; Mase, Kazuhiko ; Douglas, Christopher J. ; Ishii, Hisao ; Hersam, Mark C ; Frisbie, C. Daniel. / Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors. In: ACS Nano. 2013 ; Vol. 7, No. 11. pp. 10245-10256.
@article{fac7ed6cd3834476b663ccba3d21c641,
title = "Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors",
abstract = "We have examined the significant enhancement of ambipolar charge injection and transport properties of bottom-contact single crystal field-effect transistors (SC-FETs) based on a new rubrene derivative, bis(trifluoromethyl)- dimethyl-rubrene (fm-rubrene), by employing carbon nanotube (CNT) electrodes. The fundamental challenge associated with fm-rubrene crystals is their deep-lying HOMO and LUMO energy levels, resulting in inefficient hole injection and suboptimal electron injection from conventional Au electrodes due to large Schottky barriers. Applying thin layers of CNT network at the charge injection interface of fm-rubrene crystals substantially reduces the contact resistance for both holes and electrons; consequently, benchmark ambipolar mobilities have been achieved, reaching 4.8 cm2 V-1 s-1 for hole transport and 4.2 cm2 V-1 s-1 for electron transport. We find that such improved injection efficiency in fm-rubrene is beneficial for ultimately unveiling its intrinsic charge transport properties so as to exceed those of its parent molecule, rubrene, in the current device architecture. Our studies suggest that CNT electrodes may provide a universal approach to ameliorate the charge injection obstacles in organic electronic devices regardless of charge carrier type, likely due to the electric field enhancement along the nanotube located at the crystal/electrode interface.",
keywords = "ambipolar transport, charge injection, CNT, rubrene derivative, Schottky barrier",
author = "Wei Xie and Prabhumirashi, {Pradyumna L.} and Yasuo Nakayama and McGarry, {Kathryn A.} and Geier, {Michael L.} and Yuki Uragami and Kazuhiko Mase and Douglas, {Christopher J.} and Hisao Ishii and Hersam, {Mark C} and Frisbie, {C. Daniel}",
year = "2013",
month = "11",
day = "26",
doi = "10.1021/nn4045694",
language = "English",
volume = "7",
pages = "10245--10256",
journal = "ACS Nano",
issn = "1936-0851",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - Utilizing carbon nanotube electrodes to improve charge injection and transport in bis(trifluoromethyl)-dimethyl-rubrene ambipolar single crystal transistors

AU - Xie, Wei

AU - Prabhumirashi, Pradyumna L.

AU - Nakayama, Yasuo

AU - McGarry, Kathryn A.

AU - Geier, Michael L.

AU - Uragami, Yuki

AU - Mase, Kazuhiko

AU - Douglas, Christopher J.

AU - Ishii, Hisao

AU - Hersam, Mark C

AU - Frisbie, C. Daniel

PY - 2013/11/26

Y1 - 2013/11/26

N2 - We have examined the significant enhancement of ambipolar charge injection and transport properties of bottom-contact single crystal field-effect transistors (SC-FETs) based on a new rubrene derivative, bis(trifluoromethyl)- dimethyl-rubrene (fm-rubrene), by employing carbon nanotube (CNT) electrodes. The fundamental challenge associated with fm-rubrene crystals is their deep-lying HOMO and LUMO energy levels, resulting in inefficient hole injection and suboptimal electron injection from conventional Au electrodes due to large Schottky barriers. Applying thin layers of CNT network at the charge injection interface of fm-rubrene crystals substantially reduces the contact resistance for both holes and electrons; consequently, benchmark ambipolar mobilities have been achieved, reaching 4.8 cm2 V-1 s-1 for hole transport and 4.2 cm2 V-1 s-1 for electron transport. We find that such improved injection efficiency in fm-rubrene is beneficial for ultimately unveiling its intrinsic charge transport properties so as to exceed those of its parent molecule, rubrene, in the current device architecture. Our studies suggest that CNT electrodes may provide a universal approach to ameliorate the charge injection obstacles in organic electronic devices regardless of charge carrier type, likely due to the electric field enhancement along the nanotube located at the crystal/electrode interface.

AB - We have examined the significant enhancement of ambipolar charge injection and transport properties of bottom-contact single crystal field-effect transistors (SC-FETs) based on a new rubrene derivative, bis(trifluoromethyl)- dimethyl-rubrene (fm-rubrene), by employing carbon nanotube (CNT) electrodes. The fundamental challenge associated with fm-rubrene crystals is their deep-lying HOMO and LUMO energy levels, resulting in inefficient hole injection and suboptimal electron injection from conventional Au electrodes due to large Schottky barriers. Applying thin layers of CNT network at the charge injection interface of fm-rubrene crystals substantially reduces the contact resistance for both holes and electrons; consequently, benchmark ambipolar mobilities have been achieved, reaching 4.8 cm2 V-1 s-1 for hole transport and 4.2 cm2 V-1 s-1 for electron transport. We find that such improved injection efficiency in fm-rubrene is beneficial for ultimately unveiling its intrinsic charge transport properties so as to exceed those of its parent molecule, rubrene, in the current device architecture. Our studies suggest that CNT electrodes may provide a universal approach to ameliorate the charge injection obstacles in organic electronic devices regardless of charge carrier type, likely due to the electric field enhancement along the nanotube located at the crystal/electrode interface.

KW - ambipolar transport

KW - charge injection

KW - CNT

KW - rubrene derivative

KW - Schottky barrier

UR - http://www.scopus.com/inward/record.url?scp=84888858935&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84888858935&partnerID=8YFLogxK

U2 - 10.1021/nn4045694

DO - 10.1021/nn4045694

M3 - Article

VL - 7

SP - 10245

EP - 10256

JO - ACS Nano

JF - ACS Nano

SN - 1936-0851

IS - 11

ER -