UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection

Wei Huang, Xinming Zhuang, Ferdinand S. Melkonyan, Binghao Wang, Li Zeng, Gang Wang, Shijiao Han, Michael J. Bedzyk, Junsheng Yu, Tobin J Marks, Antonio Facchetti

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

A new type of nitrogen dioxide (NO2) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV-ozone (UVO)-treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO2] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO2] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO2 and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.

Original languageEnglish
JournalAdvanced Materials
DOIs
Publication statusAccepted/In press - 2017

Fingerprint

Ozone
Thin film transistors
Transistors
Gate dielectrics
Chemical sensors
Semiconductor materials
Nitrogen Dioxide
Fourier transform infrared spectroscopy
Chemical reactions
Atomic force microscopy
X ray photoelectron spectroscopy
Nitrogen
Copper
X ray diffraction
Microstructure
Chemical analysis
Costs

Keywords

  • Interface trap
  • Nitrogen dioxide sensors
  • Organic thin-film transistors
  • UV-ozone

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Huang, W., Zhuang, X., Melkonyan, F. S., Wang, B., Zeng, L., Wang, G., ... Facchetti, A. (Accepted/In press). UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection. Advanced Materials. https://doi.org/10.1002/adma.201701706

UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection. / Huang, Wei; Zhuang, Xinming; Melkonyan, Ferdinand S.; Wang, Binghao; Zeng, Li; Wang, Gang; Han, Shijiao; Bedzyk, Michael J.; Yu, Junsheng; Marks, Tobin J; Facchetti, Antonio.

In: Advanced Materials, 2017.

Research output: Contribution to journalArticle

Huang, W, Zhuang, X, Melkonyan, FS, Wang, B, Zeng, L, Wang, G, Han, S, Bedzyk, MJ, Yu, J, Marks, TJ & Facchetti, A 2017, 'UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection', Advanced Materials. https://doi.org/10.1002/adma.201701706
Huang, Wei ; Zhuang, Xinming ; Melkonyan, Ferdinand S. ; Wang, Binghao ; Zeng, Li ; Wang, Gang ; Han, Shijiao ; Bedzyk, Michael J. ; Yu, Junsheng ; Marks, Tobin J ; Facchetti, Antonio. / UV-Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection. In: Advanced Materials. 2017.
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