TY - JOUR
T1 - UV–Ozone Interfacial Modification in Organic Transistors for High-Sensitivity NO2 Detection
AU - Huang, Wei
AU - Zhuang, Xinming
AU - Melkonyan, Ferdinand S.
AU - Wang, Binghao
AU - Zeng, Li
AU - Wang, Gang
AU - Han, Shijiao
AU - Bedzyk, Michael J.
AU - Yu, Junsheng
AU - Marks, Tobin J.
AU - Facchetti, Antonio
N1 - Funding Information:
The authors thank AFOSR (FA9550-15-1-0044), the Northwestern University MRSEC (NSF DMR-1121262), Polyera Corp., the Foundation for Innovation Research Groups of the NSFC (Grant No. 61421002), the National Science Foundation of China (NSFC) (Grant No. 61675041), and the Project of Science and Technology of Sichuan Province (Grant No. 2016FZ0100) for support of this research. F.S.M. was supported by Award No. 70NANB14H012 from U.S. Department of Commerce, National Institute of Standards and Technology as part of the Center for Hierarchical Materials Design (CHiMaD). This work made use of the J.B. Cohen X-Ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern University, which received support from the MRSEC program (NSF DMR-1121262); the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois. W.H. and B.H.W. thank the joint-Ph.D. program supported by China Scholarship Council for fellowships. A.F. thanks the Shenzhen Peacock Plan project (KQTD20140630110339343).
PY - 2017/8/18
Y1 - 2017/8/18
N2 - A new type of nitrogen dioxide (NO2) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV–ozone (UVO)-treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO2] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO2] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO2 and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.
AB - A new type of nitrogen dioxide (NO2) gas sensor based on copper phthalocyanine (CuPc) thin film transistors (TFTs) with a simple, low-cost UV–ozone (UVO)-treated polymeric gate dielectric is reported here. The NO2 sensitivity of these TFTs with the dielectric surface UVO treatment is ≈400× greater for [NO2] = 30 ppm than for those without UVO treatment. Importantly, the sensitivity is ≈50× greater for [NO2] = 1 ppm with the UVO-treated TFTs, and a limit of detection of ≈400 ppb is achieved with this sensing platform. The morphology, microstructure, and chemical composition of the gate dielectric and CuPc films are analyzed by atomic force microscopy, grazing incident X-ray diffraction, X-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy, revealing that the enhanced sensing performance originates from UVO-derived hydroxylated species on the dielectric surface and not from chemical reactions between NO2 and the dielectric/semiconductor components. This work demonstrates that dielectric/semiconductor interface engineering is essential for readily manufacturable high-performance TFT-based gas sensors.
KW - UV–ozone
KW - interface trap
KW - nitrogen dioxide sensors
KW - organic thin-film transistors
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U2 - 10.1002/adma.201701706
DO - 10.1002/adma.201701706
M3 - Article
C2 - 28614602
AN - SCOPUS:85020744234
VL - 29
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 31
M1 - 1701706
ER -