Vacancy-hydrogen complexes in group-IV semiconductors

M. Budde, B. Bech Nielsen, J. C. Keay, Leonard C Feldman

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
Publication statusPublished - Dec 15 1999

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Vacancies
Hydrogen
Semiconductor materials
Defects
defects
hydrogen
Protons
Infrared spectroscopy
Crystalline materials
protons
spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Vacancy-hydrogen complexes in group-IV semiconductors. / Budde, M.; Nielsen, B. Bech; Keay, J. C.; Feldman, Leonard C.

In: Physica B: Condensed Matter, Vol. 273-274, 15.12.1999, p. 208-211.

Research output: Contribution to journalArticle

Budde, M. ; Nielsen, B. Bech ; Keay, J. C. ; Feldman, Leonard C. / Vacancy-hydrogen complexes in group-IV semiconductors. In: Physica B: Condensed Matter. 1999 ; Vol. 273-274. pp. 208-211.
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