Abstract
Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.
| Original language | English |
|---|---|
| Pages (from-to) | 208-211 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 273-274 |
| DOIs | |
| Publication status | Published - Dec 15 1999 |
| Event | Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Budde, M., Nielsen, B. B., Keay, J. C., & Feldman, L. C. (1999). Vacancy-hydrogen complexes in group-IV semiconductors. Physica B: Condensed Matter, 273-274, 208-211. https://doi.org/10.1016/S0921-4526(99)00448-2