TY - JOUR
T1 - Vacancy-hydrogen complexes in group-IV semiconductors
AU - Budde, M.
AU - Nielsen, B. Bech
AU - Keay, J. C.
AU - Feldman, L. C.
N1 - Funding Information:
The work on Ge was funded by the Danish National Research Foundation through Aarhus Center for Atomic Physics (ACAP); the 6H–SiC studies were supported in part by ACAP, Oak Ridge National Laboratory (ORNL) contract DE-AC05-96OR22464 with Lockheed Martin Energy Res., and ARO grant #DAAG55-98-1-0449. Wayne Holland and the staff at ORNL are gratefully acknowledged for their hospitality during MB's stay at ORNL.
PY - 1999/12/15
Y1 - 1999/12/15
N2 - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.
AB - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.
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U2 - 10.1016/S0921-4526(99)00448-2
DO - 10.1016/S0921-4526(99)00448-2
M3 - Conference article
AN - SCOPUS:0343517565
VL - 273-274
SP - 208
EP - 211
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)
Y2 - 26 July 1999 through 30 July 1999
ER -