Abstract
Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.
| Original language | English |
|---|---|
| Pages (from-to) | 208-211 |
| Number of pages | 4 |
| Journal | Physica B: Condensed Matter |
| Volume | 273-274 |
| DOIs | |
| Publication status | Published - Dec 15 1999 |
Fingerprint
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
Cite this
Vacancy-hydrogen complexes in group-IV semiconductors. / Budde, M.; Nielsen, B. Bech; Keay, J. C.; Feldman, Leonard C.
In: Physica B: Condensed Matter, Vol. 273-274, 15.12.1999, p. 208-211.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Vacancy-hydrogen complexes in group-IV semiconductors
AU - Budde, M.
AU - Nielsen, B. Bech
AU - Keay, J. C.
AU - Feldman, Leonard C
PY - 1999/12/15
Y1 - 1999/12/15
N2 - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.
AB - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.
UR - http://www.scopus.com/inward/record.url?scp=0343517565&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0343517565&partnerID=8YFLogxK
U2 - 10.1016/S0921-4526(99)00448-2
DO - 10.1016/S0921-4526(99)00448-2
M3 - Article
AN - SCOPUS:0343517565
VL - 273-274
SP - 208
EP - 211
JO - Physica B: Condensed Matter
JF - Physica B: Condensed Matter
SN - 0921-4526
ER -