Vacancy-hydrogen complexes in group-IV semiconductors

M. Budde; B. Bech Nielsen; J. C. Keay; L. C. Feldman

doi:10.1016/S0921-4526(99)00448-2

Vacancy-hydrogen complexes in group-IV semiconductors

M. Budde, B. Bech Nielsen, J. C. Keay, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

21 Citations (Scopus)

Abstract

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm^-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

Original language	English
Pages (from-to)	208-211
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00448-2
Publication status	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4526(99)00448-2

Fingerprint Dive into the research topics of 'Vacancy-hydrogen complexes in group-IV semiconductors'. Together they form a unique fingerprint.

Cite this

@article{1e9a6bd445b542cdb1e2d927fdbcba73,

title = "Vacancy-hydrogen complexes in group-IV semiconductors",

abstract = "Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.",

author = "M. Budde and Nielsen, {B. Bech} and Keay, {J. C.} and Feldman, {L. C.}",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00448-2",

language = "English",

volume = "273-274",

pages = "208--211",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

}

TY - JOUR

T1 - Vacancy-hydrogen complexes in group-IV semiconductors

AU - Budde, M.

AU - Nielsen, B. Bech

AU - Keay, J. C.

AU - Feldman, L. C.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

AB - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

UR - http://www.scopus.com/inward/record.url?scp=0343517565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343517565&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00448-2

DO - 10.1016/S0921-4526(99)00448-2

M3 - Conference article

AN - SCOPUS:0343517565

VL - 273-274

SP - 208

EP - 211

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -