Vacancy-hydrogen complexes in group-IV semiconductors

M. Budde, B. Bech Nielsen, J. C. Keay, L. C. Feldman

Research output: Contribution to journalConference article

21 Citations (Scopus)

Abstract

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

Original languageEnglish
Pages (from-to)208-211
Number of pages4
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
Publication statusPublished - Dec 15 1999
EventProceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA
Duration: Jul 26 1999Jul 30 1999

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this