Vacancy-hydrogen complexes in group-IV semiconductors

M. Budde; B. Bech Nielsen; J. C. Keay; L. C. Feldman

doi:10.1016/S0921-4526(99)00448-2

Vacancy-hydrogen complexes in group-IV semiconductors

M. Budde, B. Bech Nielsen, J. C. Keay, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Conference article

21 Citations (Scopus)

Abstract

Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm^-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

Original language	English
Pages (from-to)	208-211
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00448-2
Publication status	Published - Dec 15 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: Jul 26 1999 → Jul 30 1999

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Budde, M., Nielsen, B. B., Keay, J. C., & Feldman, L. C. (1999). Vacancy-hydrogen complexes in group-IV semiconductors. Physica B: Condensed Matter, 273-274, 208-211. https://doi.org/10.1016/S0921-4526(99)00448-2

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AU - Nielsen, B. Bech

AU - Keay, J. C.

AU - Feldman, L. C.

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AB - Hydrogen-related defects in proton-implanted crystalline Ge and 6H-SiC are studied with IR spectroscopy. Absorption lines at 1979.5, 1992.6, 2014.9, 2024.8 and 2061.5 cm-1 in Ge:H are identified as Ge-H stretch modes of three distinct vacancy-hydrogen complexes. The properties of H-related defects are very similar in Ge:H and Si:H. In contrast, no LVMs are observed in 6H-SiC:H, indicating that H behaves differently in this material.

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10.1016/S0921-4526(99)00448-2