Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

Julian J. McMorrow, Cory D. Cress, Heather N. Arnold, Vinod K. Sangwan, Deep Jariwala, Scott W. Schmucker, Tobin J Marks, Mark C Hersam

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Atomically thin MoS2 has generated intense interest for emerging electronics applications. Its two-dimensional nature and potential for low-power electronics are particularly appealing for space-bound electronics, motivating the need for a fundamental understanding of MoS2 electronic device response to the space radiation environment. In this letter, we quantify the response of MoS2 field-effect transistors (FETs) to vacuum ultraviolet (VUV) total ionizing dose radiation. Single-layer (SL) and multilayer (ML) MoS2 FETs are compared to identify differences that arise from thickness and band structure variations. The measured evolution of the FET transport properties is leveraged to identify the nature of VUV-induced trapped charge, isolating the effects of the interface and bulk oxide dielectric. In both the SL and ML cases, oxide trapped holes compete with interface trapped electrons, exhibiting an overall shift toward negative gate bias. Raman spectroscopy shows no variation in the MoS2 signatures as a result of VUV exposure, eliminating significant crystalline damage or oxidation as possible radiation degradation mechanisms. Overall, this work presents avenues for achieving radiation-hard MoS2 devices through dielectric engineering that reduces oxide and interface trapped charge.

Original languageEnglish
Article number073102
JournalApplied Physics Letters
Volume110
Issue number7
DOIs
Publication statusPublished - Feb 13 2017

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far ultraviolet radiation
radiation effects
field effect transistors
electronics
vacuum
oxides
radiation
extraterrestrial radiation
emerging
Raman spectroscopy
transport properties
signatures
engineering
degradation
damage
dosage
oxidation
shift
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

McMorrow, J. J., Cress, C. D., Arnold, H. N., Sangwan, V. K., Jariwala, D., Schmucker, S. W., ... Hersam, M. C. (2017). Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors. Applied Physics Letters, 110(7), [073102]. https://doi.org/10.1063/1.4976023

Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors. / McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N.; Sangwan, Vinod K.; Jariwala, Deep; Schmucker, Scott W.; Marks, Tobin J; Hersam, Mark C.

In: Applied Physics Letters, Vol. 110, No. 7, 073102, 13.02.2017.

Research output: Contribution to journalArticle

McMorrow, JJ, Cress, CD, Arnold, HN, Sangwan, VK, Jariwala, D, Schmucker, SW, Marks, TJ & Hersam, MC 2017, 'Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors', Applied Physics Letters, vol. 110, no. 7, 073102. https://doi.org/10.1063/1.4976023
McMorrow JJ, Cress CD, Arnold HN, Sangwan VK, Jariwala D, Schmucker SW et al. Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors. Applied Physics Letters. 2017 Feb 13;110(7). 073102. https://doi.org/10.1063/1.4976023
McMorrow, Julian J. ; Cress, Cory D. ; Arnold, Heather N. ; Sangwan, Vinod K. ; Jariwala, Deep ; Schmucker, Scott W. ; Marks, Tobin J ; Hersam, Mark C. / Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors. In: Applied Physics Letters. 2017 ; Vol. 110, No. 7.
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