Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, Eric Garfunkel

Research output: Contribution to journalArticle

51 Citations (Scopus)

Abstract

The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

Original languageEnglish
Pages (from-to)2246-2252
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number10
DOIs
Publication statusPublished - Aug 2004

Fingerprint

Photoemission
Valence bands
Conduction bands
CMOS
conduction bands
photoelectric emission
valence
Silicon
Fermi level
Energy gap
silicon
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. / Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Holl, M. Banaszak; Garfunkel, Eric.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 08.2004, p. 2246-2252.

Research output: Contribution to journalArticle

Sayan, S. ; Bartynski, R. A. ; Zhao, X. ; Gusev, E. P. ; Vanderbilt, D. ; Croft, M. ; Holl, M. Banaszak ; Garfunkel, Eric. / Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. In: Physica Status Solidi (B) Basic Research. 2004 ; Vol. 241, No. 10. pp. 2246-2252.
@article{139fef6e883d432aa1f3c999d198fac1,
title = "Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study",
abstract = "The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.",
author = "S. Sayan and Bartynski, {R. A.} and X. Zhao and Gusev, {E. P.} and D. Vanderbilt and M. Croft and Holl, {M. Banaszak} and Eric Garfunkel",
year = "2004",
month = "8",
doi = "10.1002/pssb.200404945",
language = "English",
volume = "241",
pages = "2246--2252",
journal = "Physica Status Solidi (B): Basic Research",
issn = "0370-1972",
publisher = "Wiley-VCH Verlag",
number = "10",

}

TY - JOUR

T1 - Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack

T2 - A combined photoemission and inverse photoemission study

AU - Sayan, S.

AU - Bartynski, R. A.

AU - Zhao, X.

AU - Gusev, E. P.

AU - Vanderbilt, D.

AU - Croft, M.

AU - Holl, M. Banaszak

AU - Garfunkel, Eric

PY - 2004/8

Y1 - 2004/8

N2 - The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

AB - The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

UR - http://www.scopus.com/inward/record.url?scp=4644357044&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4644357044&partnerID=8YFLogxK

U2 - 10.1002/pssb.200404945

DO - 10.1002/pssb.200404945

M3 - Article

AN - SCOPUS:4644357044

VL - 241

SP - 2246

EP - 2252

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 10

ER -