Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack

A combined photoemission and inverse photoemission study

S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, Eric Garfunkel

Research output: Contribution to journal › Article

51 Citations (Scopus)

Abstract

The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

Original languageEnglish
Pages (from-to)2246-2252
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Volume241
Issue number10
DOIs
Publication statusPublished - Aug 2004

Fingerprint

Photoemission
Valence bands
Conduction bands
CMOS
conduction bands
photoelectric emission
valence
Silicon
Fermi level
Energy gap
silicon
energy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. / Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Holl, M. Banaszak; Garfunkel, Eric.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 08.2004, p. 2246-2252.

Research output: Contribution to journal › Article

Sayan, S, Bartynski, RA, Zhao, X, Gusev, EP, Vanderbilt, D, Croft, M, Holl, MB & Garfunkel, E 2004, 'Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study', Physica Status Solidi (B) Basic Research, vol. 241, no. 10, pp. 2246-2252. https://doi.org/10.1002/pssb.200404945
Sayan S, Bartynski RA, Zhao X, Gusev EP, Vanderbilt D, Croft M et al. Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study. Physica Status Solidi (B) Basic Research. 2004 Aug;241(10):2246-2252. https://doi.org/10.1002/pssb.200404945
Sayan, S. ; Bartynski, R. A. ; Zhao, X. ; Gusev, E. P. ; Vanderbilt, D. ; Croft, M. ; Holl, M. Banaszak ; Garfunkel, Eric. / Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. In: Physica Status Solidi (B) Basic Research. 2004 ; Vol. 241, No. 10. pp. 2246-2252.
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