Abstract
The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.
| Original language | English |
|---|---|
| Pages (from-to) | 2246-2252 |
| Number of pages | 7 |
| Journal | Physica Status Solidi (B) Basic Research |
| Volume | 241 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Aug 2004 |
Fingerprint
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. / Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Holl, M. Banaszak; Garfunkel, Eric.
In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 08.2004, p. 2246-2252.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack
T2 - A combined photoemission and inverse photoemission study
AU - Sayan, S.
AU - Bartynski, R. A.
AU - Zhao, X.
AU - Gusev, E. P.
AU - Vanderbilt, D.
AU - Croft, M.
AU - Holl, M. Banaszak
AU - Garfunkel, Eric
PY - 2004/8
Y1 - 2004/8
N2 - The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.
AB - The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.
UR - http://www.scopus.com/inward/record.url?scp=4644357044&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4644357044&partnerID=8YFLogxK
U2 - 10.1002/pssb.200404945
DO - 10.1002/pssb.200404945
M3 - Article
AN - SCOPUS:4644357044
VL - 241
SP - 2246
EP - 2252
JO - Physica Status Solidi (B): Basic Research
JF - Physica Status Solidi (B): Basic Research
SN - 0370-1972
IS - 10
ER -