Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan; R. A. Bartynski; X. Zhao; E. P. Gusev; D. Vanderbilt; M. Croft; M. Banaszak Holl; E. Garfunkel

doi:10.1002/pssb.200404945

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, E. Garfunkel

Rutgers University

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The densities of states above and below the Fermi energy for the ZrO ₂/SiO_xN_y/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO₂ is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

Original language	English
Pages (from-to)	2246-2252
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	10
DOIs	https://doi.org/10.1002/pssb.200404945
Publication status	Published - Aug 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. / Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Holl, M. Banaszak; Garfunkel, E.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 08.2004, p. 2246-2252.

Research output: Contribution to journal › Article › peer-review

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