Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan; R. A. Bartynski; X. Zhao; E. P. Gusev; D. Vanderbilt; M. Croft; M. Banaszak Holl; E. Garfunkel

doi:10.1002/pssb.200404945

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, E. Garfunkel

Rutgers University

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The densities of states above and below the Fermi energy for the ZrO ₂/SiO_xN_y/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO₂ is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

Original language	English
Pages (from-to)	2246-2252
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	10
DOIs	https://doi.org/10.1002/pssb.200404945
Publication status	Published - Aug 2004

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1002/pssb.200404945

Fingerprint Dive into the research topics of 'Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study'. Together they form a unique fingerprint.

Cite this

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. / Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Holl, M. Banaszak; Garfunkel, E.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 08.2004, p. 2246-2252.

Research output: Contribution to journal › Article › peer-review

@article{139fef6e883d432aa1f3c999d198fac1,

title = "Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study",

abstract = "The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.",

author = "S. Sayan and Bartynski, {R. A.} and X. Zhao and Gusev, {E. P.} and D. Vanderbilt and M. Croft and Holl, {M. Banaszak} and E. Garfunkel",

year = "2004",

month = aug,

doi = "10.1002/pssb.200404945",

language = "English",

volume = "241",

pages = "2246--2252",

journal = "Physica Status Solidi (B): Basic Research",

issn = "0370-1972",

publisher = "Wiley-VCH Verlag",

number = "10",

}

TY - JOUR

T1 - Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack

T2 - A combined photoemission and inverse photoemission study

AU - Sayan, S.

AU - Bartynski, R. A.

AU - Zhao, X.

AU - Gusev, E. P.

AU - Vanderbilt, D.

AU - Croft, M.

AU - Holl, M. Banaszak

AU - Garfunkel, E.

PY - 2004/8

Y1 - 2004/8

N2 - The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

AB - The densities of states above and below the Fermi energy for the ZrO 2/SiOxNy/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO2 is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

UR - http://www.scopus.com/inward/record.url?scp=4644357044&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4644357044&partnerID=8YFLogxK

U2 - 10.1002/pssb.200404945

DO - 10.1002/pssb.200404945

M3 - Article

AN - SCOPUS:4644357044

VL - 241

SP - 2246

EP - 2252

JO - Physica Status Solidi (B): Basic Research

JF - Physica Status Solidi (B): Basic Research

SN - 0370-1972

IS - 10

ER -

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Valence and conduction band offsets of a ZrO<sub>2</sub>/SiO <sub>x</sub>N<sub>y</sub>/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study'. Together they form a unique fingerprint.

Cite this