Valence and conduction band offsets of a ZrO2/SiO xNy/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan; R. A. Bartynski; X. Zhao; E. P. Gusev; D. Vanderbilt; M. Croft; M. Banaszak Holl; E. Garfunkel

doi:10.1002/pssb.200404945

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study

S. Sayan, R. A. Bartynski, X. Zhao, E. P. Gusev, D. Vanderbilt, M. Croft, M. Banaszak Holl, E. Garfunkel

Rutgers University

Research output: Contribution to journal › Article

51 Citations (Scopus)

Abstract

The densities of states above and below the Fermi energy for the ZrO ₂/SiO_xN_y/n-Si system are examined by photoemission and inverse photoemission and compared with results from first principles calculations. The measured band gap of ZrO₂ is 5.68 eV and the valence and conduction band offsets relative to silicon are 3.40 and 1.16 eV respectively.

Original language	English
Pages (from-to)	2246-2252
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	241
Issue number	10
DOIs	https://doi.org/10.1002/pssb.200404945
Publication status	Published - Aug 1 2004

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ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Cite this

Sayan, S., Bartynski, R. A., Zhao, X., Gusev, E. P., Vanderbilt, D., Croft, M., Holl, M. B., & Garfunkel, E. (2004). Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack: A combined photoemission and inverse photoemission study. Physica Status Solidi (B) Basic Research, 241(10), 2246-2252. https://doi.org/10.1002/pssb.200404945

Valence and conduction band offsets of a ZrO₂/SiO _xN_y/n-Si CMOS gate stack : A combined photoemission and inverse photoemission study. / Sayan, S.; Bartynski, R. A.; Zhao, X.; Gusev, E. P.; Vanderbilt, D.; Croft, M.; Holl, M. Banaszak; Garfunkel, E.

In: Physica Status Solidi (B) Basic Research, Vol. 241, No. 10, 01.08.2004, p. 2246-2252.

Research output: Contribution to journal › Article

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10.1002/pssb.200404945