Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe, Hideaki Hozumi, Yongqian Gao, Goki Eda, Cecilia Mattevi, Takeshi Fujita, Akitaka Yoshigoe, Shinji Ishizuka, Lyudmyla Adamska, Takatoshi Yamada, Andrew M. Dattelbaum, Gautam Gupta, Stephen K. Doorn, Kirill A. Velizhanin, Yuden Teraoka, Mingwei Chen, Han Htoon, Manish ChhowallaAditya D. Mohite, Yuji Takakuwa

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600°C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500°C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart.

Original languageEnglish
JournalPhysica Status Solidi (A) Applications and Materials Science
DOIs
Publication statusAccepted/In press - 2016

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Graphite
Valence bands
Optoelectronic devices
Oxides
Graphene
Electronic structure
graphene
Annealing
electronic structure
valence
annealing
oxides
Energy gap
Ultraviolet photoelectron spectroscopy
ultraviolet spectroscopy
Fermi level
Photocurrents
chemical properties
Temperature
Chemical properties

Keywords

  • Fermi level
  • Graphene oxide
  • Optoelectronic
  • Ultraviolet photoelectron spectroscopy
  • Valence-band electronic structure

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics. / Yamaguchi, Hisato; Ogawa, Shuichi; Watanabe, Daiki; Hozumi, Hideaki; Gao, Yongqian; Eda, Goki; Mattevi, Cecilia; Fujita, Takeshi; Yoshigoe, Akitaka; Ishizuka, Shinji; Adamska, Lyudmyla; Yamada, Takatoshi; Dattelbaum, Andrew M.; Gupta, Gautam; Doorn, Stephen K.; Velizhanin, Kirill A.; Teraoka, Yuden; Chen, Mingwei; Htoon, Han; Chhowalla, Manish; Mohite, Aditya D.; Takakuwa, Yuji.

In: Physica Status Solidi (A) Applications and Materials Science, 2016.

Research output: Contribution to journalArticle

Yamaguchi, H, Ogawa, S, Watanabe, D, Hozumi, H, Gao, Y, Eda, G, Mattevi, C, Fujita, T, Yoshigoe, A, Ishizuka, S, Adamska, L, Yamada, T, Dattelbaum, AM, Gupta, G, Doorn, SK, Velizhanin, KA, Teraoka, Y, Chen, M, Htoon, H, Chhowalla, M, Mohite, AD & Takakuwa, Y 2016, 'Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics', Physica Status Solidi (A) Applications and Materials Science. https://doi.org/10.1002/pssa.201532855
Yamaguchi, Hisato ; Ogawa, Shuichi ; Watanabe, Daiki ; Hozumi, Hideaki ; Gao, Yongqian ; Eda, Goki ; Mattevi, Cecilia ; Fujita, Takeshi ; Yoshigoe, Akitaka ; Ishizuka, Shinji ; Adamska, Lyudmyla ; Yamada, Takatoshi ; Dattelbaum, Andrew M. ; Gupta, Gautam ; Doorn, Stephen K. ; Velizhanin, Kirill A. ; Teraoka, Yuden ; Chen, Mingwei ; Htoon, Han ; Chhowalla, Manish ; Mohite, Aditya D. ; Takakuwa, Yuji. / Valence-band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics. In: Physica Status Solidi (A) Applications and Materials Science. 2016.
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abstract = "We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600°C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500°C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart.",
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AU - Yamaguchi, Hisato

AU - Ogawa, Shuichi

AU - Watanabe, Daiki

AU - Hozumi, Hideaki

AU - Gao, Yongqian

AU - Eda, Goki

AU - Mattevi, Cecilia

AU - Fujita, Takeshi

AU - Yoshigoe, Akitaka

AU - Ishizuka, Shinji

AU - Adamska, Lyudmyla

AU - Yamada, Takatoshi

AU - Dattelbaum, Andrew M.

AU - Gupta, Gautam

AU - Doorn, Stephen K.

AU - Velizhanin, Kirill A.

AU - Teraoka, Yuden

AU - Chen, Mingwei

AU - Htoon, Han

AU - Chhowalla, Manish

AU - Mohite, Aditya D.

AU - Takakuwa, Yuji

PY - 2016

Y1 - 2016

N2 - We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600°C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500°C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart.

AB - We report valence-band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. The degree of oxygen functionalization was controlled by annealing temperature, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in the density of states around the Fermi level upon thermal annealing at ∼600°C. The result indicates that while there is an apparent bandgap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of bandgap closure was correlated with the electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ∼500°C leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to an as-synthesized counterpart.

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