Valence-band structure of highly efficient p-type thermoelectric PbTe-PbS alloys

Christopher M. Jaworski, Michele D. Nielsen, Hsin Wang, Steven N. Girard, Wei Cai, Wally D. Porter, Mercouri G Kanatzidis, Joseph P. Heremans

Research output: Contribution to journalArticle

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Abstract

Experimental evidence is given relevant to the temperature dependence of the valence band structure of PbTe and PbTe1-xSxaloys (0.04≤x≤0.12), and its effect on the thermoelectric figure of merit ZT. The x=0.08 sample has ZT∼1.55 at 773 K. The magnetic field dependence of the high-temperature Hall resistivity of heavily p-type (>1019 cm-3) Na-doped PbTe1-xSx reveals the presence of high-mobility electrons. This casts doubts on prior analyses of the Hall coefficient suggesting that temperature induces a rapid rise in energy of the "heavy" hole relative to the "light" hole bands. The electron-like behavior is likely induced by the topology of the Fermi surface when the L- and Σ-bands merge. Negative values for the low-temperature thermopower are also observed. The data show that PbTe continues to be a direct-gap semiconductor at temperatures where the ZT and S2σ of p-type PbTe are optimal, e.g., 700-800 K.

Original languageEnglish
Article number045203
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume87
Issue number4
DOIs
Publication statusPublished - Jan 4 2013

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Valence bands
Band structure
valence
electron mobility
figure of merit
Temperature
Fermi surfaces
Hall effect
casts
topology
Fermi surface
Electron mobility
Thermoelectric power
temperature dependence
electrical resistivity
temperature
magnetic fields
Topology
Semiconductor materials
Magnetic fields

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Jaworski, C. M., Nielsen, M. D., Wang, H., Girard, S. N., Cai, W., Porter, W. D., ... Heremans, J. P. (2013). Valence-band structure of highly efficient p-type thermoelectric PbTe-PbS alloys. Physical Review B - Condensed Matter and Materials Physics, 87(4), [045203]. https://doi.org/10.1103/PhysRevB.87.045203

Valence-band structure of highly efficient p-type thermoelectric PbTe-PbS alloys. / Jaworski, Christopher M.; Nielsen, Michele D.; Wang, Hsin; Girard, Steven N.; Cai, Wei; Porter, Wally D.; Kanatzidis, Mercouri G; Heremans, Joseph P.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 87, No. 4, 045203, 04.01.2013.

Research output: Contribution to journalArticle

Jaworski, Christopher M. ; Nielsen, Michele D. ; Wang, Hsin ; Girard, Steven N. ; Cai, Wei ; Porter, Wally D. ; Kanatzidis, Mercouri G ; Heremans, Joseph P. / Valence-band structure of highly efficient p-type thermoelectric PbTe-PbS alloys. In: Physical Review B - Condensed Matter and Materials Physics. 2013 ; Vol. 87, No. 4.
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