Vapor phase self-assembly of molecular gate dielectrics for thin film transistors

Sara A. DiBenedetto, David Frattarelli, Mark A Ratner, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors (OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.

Original languageEnglish
Pages (from-to)7528-7529
Number of pages2
JournalJournal of the American Chemical Society
Volume130
Issue number24
DOIs
Publication statusPublished - Jun 18 2008

Fingerprint

Organic field effect transistors
Gate dielectrics
Thin film transistors
Hydrogen Bonding
Molecular Structure
Self assembly
Vapors
Molecular structure
Hydrogen bonds
Capacitance
Thin films
Molecules
pentacene

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Vapor phase self-assembly of molecular gate dielectrics for thin film transistors. / DiBenedetto, Sara A.; Frattarelli, David; Ratner, Mark A; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 130, No. 24, 18.06.2008, p. 7528-7529.

Research output: Contribution to journalArticle

DiBenedetto, Sara A. ; Frattarelli, David ; Ratner, Mark A ; Facchetti, Antonio ; Marks, Tobin J. / Vapor phase self-assembly of molecular gate dielectrics for thin film transistors. In: Journal of the American Chemical Society. 2008 ; Vol. 130, No. 24. pp. 7528-7529.
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