Vapor phase SiO2 etching and metallic contamination removal in an integrated cluster system

Y. Ma; M. L. Green; L. C. Feldman; J. Sapjeta; K. J. Hanson; T. W. Weidman

doi:10.1116/1.588172

Vapor phase SiO₂ etching and metallic contamination removal in an integrated cluster system

Y. Ma, M. L. Green, L. C. Feldman, J. Sapjeta, K. J. Hanson, T. W. Weidman

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

Vapor phase pregate oxide surface preparation was studied in a high vacuum cluster tool. SiO₂ was etched with anhydrous vapor hydrogen fluoride and methanol vapor. The oxide etch rate can be well controlled by varying wafer temperature, chamber pressure, and gas flow rates. A standard error of 5% in oxide etch rate has been achieved. Particles generated are less than ten per 125 mm wafer at an oxide etch rate of 60 angstrom/min. Atomic force microscopy measurements reveal no added Si surface microroughness attributable to vapor hydrogen fluoride (HF) etching. Trace metallic contaminants such as iron and chromium were reduced with UV/Cl₂ based processes. A combination of vapor HF etching followed by UV/Cl₂ metal removal is an effective pregate oxide surface preparation.

Original language	English
Pages (from-to)	1460-1465
Number of pages	6
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	4
DOIs	https://doi.org/10.1116/1.588172
Publication status	Published - Jul 1 1995
Event	Proceedings of the 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-22) - Scottsdale, AZ, USA Duration: Jan 8 1995 → Jan 12 1995

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Vapor phase SiO₂ etching and metallic contamination removal in an integrated cluster system. / Ma, Y.; Green, M. L.; Feldman, L. C.; Sapjeta, J.; Hanson, K. J.; Weidman, T. W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 4, 01.07.1995, p. 1460-1465.

Research output: Contribution to journal › Conference article › peer-review

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abstract = "Vapor phase pregate oxide surface preparation was studied in a high vacuum cluster tool. SiO2 was etched with anhydrous vapor hydrogen fluoride and methanol vapor. The oxide etch rate can be well controlled by varying wafer temperature, chamber pressure, and gas flow rates. A standard error of 5% in oxide etch rate has been achieved. Particles generated are less than ten per 125 mm wafer at an oxide etch rate of 60 angstrom/min. Atomic force microscopy measurements reveal no added Si surface microroughness attributable to vapor hydrogen fluoride (HF) etching. Trace metallic contaminants such as iron and chromium were reduced with UV/Cl2 based processes. A combination of vapor HF etching followed by UV/Cl2 metal removal is an effective pregate oxide surface preparation.",

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AU - Weidman, T. W.

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AB - Vapor phase pregate oxide surface preparation was studied in a high vacuum cluster tool. SiO2 was etched with anhydrous vapor hydrogen fluoride and methanol vapor. The oxide etch rate can be well controlled by varying wafer temperature, chamber pressure, and gas flow rates. A standard error of 5% in oxide etch rate has been achieved. Particles generated are less than ten per 125 mm wafer at an oxide etch rate of 60 angstrom/min. Atomic force microscopy measurements reveal no added Si surface microroughness attributable to vapor hydrogen fluoride (HF) etching. Trace metallic contaminants such as iron and chromium were reduced with UV/Cl2 based processes. A combination of vapor HF etching followed by UV/Cl2 metal removal is an effective pregate oxide surface preparation.

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