Vapor phase SiO2 etching and metallic contamination removal in an integrated cluster system

Y. Ma, M. L. Green, L. C. Feldman, J. Sapjeta, K. J. Hanson, T. W. Weidman

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

Vapor phase pregate oxide surface preparation was studied in a high vacuum cluster tool. SiO2 was etched with anhydrous vapor hydrogen fluoride and methanol vapor. The oxide etch rate can be well controlled by varying wafer temperature, chamber pressure, and gas flow rates. A standard error of 5% in oxide etch rate has been achieved. Particles generated are less than ten per 125 mm wafer at an oxide etch rate of 60 angstrom/min. Atomic force microscopy measurements reveal no added Si surface microroughness attributable to vapor hydrogen fluoride (HF) etching. Trace metallic contaminants such as iron and chromium were reduced with UV/Cl2 based processes. A combination of vapor HF etching followed by UV/Cl2 metal removal is an effective pregate oxide surface preparation.

Original languageEnglish
Pages (from-to)1460-1465
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume13
Issue number4
DOIs
Publication statusPublished - Jul 1 1995
EventProceedings of the 22nd Annual Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-22) - Scottsdale, AZ, USA
Duration: Jan 8 1995Jan 12 1995

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this