Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D

M. C. Hersam, N. P. Guisinger, J. Lee, K. Cheng, J. W. Lyding

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The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces.

Original languageEnglish
Pages (from-to)201-203
Number of pages3
JournalApplied Physics Letters
Issue number2
Publication statusPublished - Jan 14 2002


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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