Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D

Mark C Hersam, N. P. Guisinger, J. Lee, K. Cheng, J. W. Lyding

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces.

Original languageEnglish
Pages (from-to)201-203
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number2
DOIs
Publication statusPublished - Jan 14 2002

Fingerprint

passivity
scanning tunneling microscopy
temperature
desorption
vapor phases
thermodynamics
silicon
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D. / Hersam, Mark C; Guisinger, N. P.; Lee, J.; Cheng, K.; Lyding, J. W.

In: Applied Physics Letters, Vol. 80, No. 2, 14.01.2002, p. 201-203.

Research output: Contribution to journalArticle

Hersam, Mark C ; Guisinger, N. P. ; Lee, J. ; Cheng, K. ; Lyding, J. W. / Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D. In: Applied Physics Letters. 2002 ; Vol. 80, No. 2. pp. 201-203.
@article{a9ba93f8823746d29d562b493fe5f24f,
title = "Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D",
abstract = "The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces.",
author = "Hersam, {Mark C} and Guisinger, {N. P.} and J. Lee and K. Cheng and Lyding, {J. W.}",
year = "2002",
month = "1",
day = "14",
doi = "10.1063/1.1431689",
language = "English",
volume = "80",
pages = "201--203",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Variable temperature study of the passivation of dangling bonds at Si(100)-2×1 reconstructed surfaces with H and D

AU - Hersam, Mark C

AU - Guisinger, N. P.

AU - Lee, J.

AU - Cheng, K.

AU - Lyding, J. W.

PY - 2002/1/14

Y1 - 2002/1/14

N2 - The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces.

AB - The passivation of the Si(100) surface with H and D is studied with scanning tunneling microscopy (STM). During the passivation process, the clean Si(100) surface is exposed to a gas phase mixture of atomic H and D. By directly observing the dramatic isotopic difference in STM-induced electron stimulated desorption rates, the relative surface concentrations of H and D is discerned with atomic resolution. The ratio of D to H on the Si(100) surface is found to vary by more than an order of magnitude following monolayer passivation at temperatures between 300 and 700 K. A statistical thermodynamics model attributes this behavior to the difference in the vibrational frequencies of H and D on silicon surfaces.

UR - http://www.scopus.com/inward/record.url?scp=79956057370&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79956057370&partnerID=8YFLogxK

U2 - 10.1063/1.1431689

DO - 10.1063/1.1431689

M3 - Article

AN - SCOPUS:79956057370

VL - 80

SP - 201

EP - 203

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -