Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

Guotong Du; Kathleen A. Stair; Gregory Devane; Jianping Zhang; Robert P. H. Chang; C. W. White; Xuemei Li; Zhiling Wang; Ying Liu

doi:10.1088/0268-1242/11/11/015

Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

Guotong Du, Kathleen A. Stair, Gregory Devane, Jianping Zhang, Robert P. H. Chang, C. W. White, Xuemei Li, Zhiling Wang, Ying Liu

Northwestern University

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al_0.1Ga_0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al_0.1Ga_0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.

Original language	English
Pages (from-to)	1734-1736
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	11
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/11/11/015
Publication status	Published - 1996

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ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Science(all)
Condensed Matter Physics

Cite this

Du, G., Stair, K. A., Devane, G., Zhang, J., Chang, R. P. H., White, C. W., Li, X., Wang, Z., & Liu, Y. (1996). Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask. Semiconductor Science and Technology, 11(11), 1734-1736. https://doi.org/10.1088/0268-1242/11/11/015

Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask. / Du, Guotong; Stair, Kathleen A.; Devane, Gregory; Zhang, Jianping; Chang, Robert P. H.; White, C. W.; Li, Xuemei; Wang, Zhiling; Liu, Ying.

In: Semiconductor Science and Technology, Vol. 11, No. 11, 1996, p. 1734-1736.

Research output: Contribution to journal › Article

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abstract = "We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.",

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AU - Du, Guotong

AU - Stair, Kathleen A.

AU - Devane, Gregory

AU - Zhang, Jianping

AU - Chang, Robert P. H.

AU - White, C. W.

AU - Li, Xuemei

AU - Wang, Zhiling

AU - Liu, Ying

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AB - We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.

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10.1088/0268-1242/11/11/015