Abstract
We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 1734-1736 |
| Number of pages | 3 |
| Journal | Semiconductor Science and Technology |
| Volume | 11 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1996 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
Cite this
Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask. / Du, Guotong; Stair, Kathleen A.; Devane, Gregory; Zhang, Jianping; Chang, Robert P. H.; White, C. W.; Li, Xuemei; Wang, Zhiling; Liu, Ying.
In: Semiconductor Science and Technology, Vol. 11, No. 11, 1996, p. 1734-1736.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask
AU - Du, Guotong
AU - Stair, Kathleen A.
AU - Devane, Gregory
AU - Zhang, Jianping
AU - Chang, Robert P. H.
AU - White, C. W.
AU - Li, Xuemei
AU - Wang, Zhiling
AU - Liu, Ying
PY - 1996
Y1 - 1996
N2 - We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.
AB - We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.
UR - http://www.scopus.com/inward/record.url?scp=0030289971&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030289971&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/11/11/015
DO - 10.1088/0268-1242/11/11/015
M3 - Article
AN - SCOPUS:0030289971
VL - 11
SP - 1734
EP - 1736
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
ER -