Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

Guotong Du; Kathleen A. Stair; Gregory Devane; Jianping Zhang; R. P.H. Chang; C. W. White; Xuemei Li; Zhiling Wang; Ying Liu

doi:10.1088/0268-1242/11/11/015

Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

Guotong Du, Kathleen A. Stair, Gregory Devane, Jianping Zhang, R. P.H. Chang, C. W. White, Xuemei Li, Zhiling Wang, Ying Liu

Northwestern University

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al_0.1Ga_0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al_0.1Ga_0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.

Original language	English
Pages (from-to)	1734-1736
Number of pages	3
Journal	Semiconductor Science and Technology
Volume	11
Issue number	11
DOIs	https://doi.org/10.1088/0268-1242/11/11/015
Publication status	Published - 1996

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/11/11/015

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Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask. / Du, Guotong; Stair, Kathleen A.; Devane, Gregory; Zhang, Jianping; Chang, R. P.H.; White, C. W.; Li, Xuemei; Wang, Zhiling; Liu, Ying.

In: Semiconductor Science and Technology, Vol. 11, No. 11, 1996, p. 1734-1736.

Research output: Contribution to journal › Article › peer-review

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title = "Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask",

abstract = "We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.",

author = "Guotong Du and Stair, {Kathleen A.} and Gregory Devane and Jianping Zhang and Chang, {R. P.H.} and White, {C. W.} and Xuemei Li and Zhiling Wang and Ying Liu",

year = "1996",

doi = "10.1088/0268-1242/11/11/015",

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T1 - Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

AU - Du, Guotong

AU - Stair, Kathleen A.

AU - Devane, Gregory

AU - Zhang, Jianping

AU - Chang, R. P.H.

AU - White, C. W.

AU - Li, Xuemei

AU - Wang, Zhiling

AU - Liu, Ying

PY - 1996

Y1 - 1996

N2 - We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.

AB - We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.

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ER -

Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask

Abstract

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