Abstract
We have devised a novel vertical-cavity surface-emitting laser structure. The epitaxial layers have been grown by molecular beam epitaxy (MBE). The bottom mirror consists of 30.5 pairs of Al0.1Ga0.9As/AlAs multilayer distributed Bragg reflector (DBR). The top mirror is a hybrid reflector consisting of 8.5 pairs of Al0.1Ga0.9As/AlAs multilayer and a semi-transparent metal film. The structure is obtained by two He ion implantations using tungsten wires as an implant mask. The lowest threshold current is 8.2 mA, and the highest peak light output power is 1.8 mW under room-temperature cw conditions.
| Original language | English |
|---|---|
| Pages (from-to) | 1734-1736 |
| Number of pages | 3 |
| Journal | Semiconductor Science and Technology |
| Volume | 11 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 1996 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Materials Science(all)
- Condensed Matter Physics
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Cite this
Du, G., Stair, K. A., Devane, G., Zhang, J., Chang, R. P. H., White, C. W., Li, X., Wang, Z., & Liu, Y. (1996). Vertical-cavity surface-emitting laser with a thin metal mirror fabricated by double implantation using a tungsten wire mask. Semiconductor Science and Technology, 11(11), 1734-1736. https://doi.org/10.1088/0268-1242/11/11/015