Abstract
Absorption line shapes associated with the stretch mode of bond-center hydrogen (formula presented) at (formula presented) and the twofold degenerate mode of hydrogen near the tetrahedral site (formula presented) at (formula presented) in germanium are measured with infrared-absorption spectroscopy. The (formula presented) line shape measured at 10 K for the case of low hydrogen concentrations gives a lifetime between 15 and 23 ps. Similar in magnitude to the (formula presented) observed for the same defect in silicon [M. Budde et al, Phys. Rev. Lett. (formula presented) 1452 (2000)], this observation indicates that the lifetime of the bond-centered mode is largely insensitive to the phonon frequency distributions of the host material. Pure dephasing dynamics of hydrogen in germanium are studied by measuring the shape of the 1794- and (formula presented) lines as a function of temperature. These measurements are analyzed using a recently formulated exchange model for vibrational dephasing. The temperature dependence of the (formula presented) line shape is attributed to thermal fluctuations in the occupation number of a pseudolocalized mode at (formula presented).
| Original language | English |
|---|---|
| Pages (from-to) | 1-9 |
| Number of pages | 9 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics