Abstract
The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.
| Original language | English |
|---|---|
| Pages (from-to) | 1452-1455 |
| Number of pages | 4 |
| Journal | Physical review letters |
| Volume | 85 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Aug 14 2000 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Cite this
Budde, M., Lüpke, G., Parks Cheney, C., Tolk, N. H., & Feldman, L. C. (2000). Vibrational lifetime of bond-center hydrogen in crystalline silicon. Physical review letters, 85(7), 1452-1455. https://doi.org/10.1103/PhysRevLett.85.1452