Abstract
The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.
| Original language | English |
|---|---|
| Pages (from-to) | 1452-1455 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 85 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Aug 14 2000 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Vibrational lifetime of bond-center hydrogen in crystalline silicon. / Budde, M.; Lüpke, G.; Parks Cheney, C.; Tolk, N. H.; Feldman, Leonard C.
In: Physical Review Letters, Vol. 85, No. 7, 14.08.2000, p. 1452-1455.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Vibrational lifetime of bond-center hydrogen in crystalline silicon
AU - Budde, M.
AU - Lüpke, G.
AU - Parks Cheney, C.
AU - Tolk, N. H.
AU - Feldman, Leonard C
PY - 2000/8/14
Y1 - 2000/8/14
N2 - The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.
AB - The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.
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UR - http://www.scopus.com/inward/citedby.url?scp=0343279083&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.85.1452
DO - 10.1103/PhysRevLett.85.1452
M3 - Article
AN - SCOPUS:0343279083
VL - 85
SP - 1452
EP - 1455
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 7
ER -