Abstract
The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.
Original language | English |
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Pages (from-to) | 1452-1455 |
Number of pages | 4 |
Journal | Physical review letters |
Volume | 85 |
Issue number | 7 |
DOIs | |
Publication status | Published - Aug 14 2000 |
ASJC Scopus subject areas
- Physics and Astronomy(all)