Vibrational lifetime of bond-center hydrogen in crystalline silicon

M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, L. C. Feldman

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

Original languageEnglish
Pages (from-to)1452-1455
Number of pages4
JournalPhysical review letters
Volume85
Issue number7
DOIs
Publication statusPublished - Aug 14 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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