Vibrational lifetime of bond-center hydrogen in crystalline silicon

M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, Leonard C Feldman

Research output: Contribution to journalArticle

84 Citations (Scopus)

Abstract

The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

Original languageEnglish
Pages (from-to)1452-1455
Number of pages4
JournalPhysical Review Letters
Volume85
Issue number7
DOIs
Publication statusPublished - Aug 14 2000

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life (durability)
silicon
hydrogen
bleaching
vibration mode
defects
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Vibrational lifetime of bond-center hydrogen in crystalline silicon. / Budde, M.; Lüpke, G.; Parks Cheney, C.; Tolk, N. H.; Feldman, Leonard C.

In: Physical Review Letters, Vol. 85, No. 7, 14.08.2000, p. 1452-1455.

Research output: Contribution to journalArticle

Budde, M. ; Lüpke, G. ; Parks Cheney, C. ; Tolk, N. H. ; Feldman, Leonard C. / Vibrational lifetime of bond-center hydrogen in crystalline silicon. In: Physical Review Letters. 2000 ; Vol. 85, No. 7. pp. 1452-1455.
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