Vibrational lifetime of bond-center hydrogen in crystalline silicon

M. Budde; G. Lüpke; C. Parks Cheney; N. H. Tolk; L. C. Feldman

doi:10.1103/PhysRevLett.85.1452

Vibrational lifetime of bond-center hydrogen in crystalline silicon

M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

85 Citations (Scopus)

Abstract

The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T₁ = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

Original language	English
Pages (from-to)	1452-1455
Number of pages	4
Journal	Physical review letters
Volume	85
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.85.1452
Publication status	Published - Aug 14 2000

ASJC Scopus subject areas

Physics and Astronomy(all)

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title = "Vibrational lifetime of bond-center hydrogen in crystalline silicon",

abstract = "The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.",

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AU - Lüpke, G.

AU - Parks Cheney, C.

AU - Tolk, N. H.

AU - Feldman, L. C.

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N2 - The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

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