Vibrational lifetime of bond-center hydrogen in crystalline silicon

M. Budde; G. Lüpke; C. Parks Cheney; N. H. Tolk; L. C. Feldman

doi:10.1103/PhysRevLett.85.1452

Vibrational lifetime of bond-center hydrogen in crystalline silicon

M. Budde, G. Lüpke, C. Parks Cheney, N. H. Tolk, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Article

84 Citations (Scopus)

Abstract

The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T₁ = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

Original language	English
Pages (from-to)	1452-1455
Number of pages	4
Journal	Physical review letters
Volume	85
Issue number	7
DOIs	https://doi.org/10.1103/PhysRevLett.85.1452
Publication status	Published - Aug 14 2000

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Budde, M., Lüpke, G., Parks Cheney, C., Tolk, N. H., & Feldman, L. C. (2000). Vibrational lifetime of bond-center hydrogen in crystalline silicon. Physical review letters, 85(7), 1452-1455. https://doi.org/10.1103/PhysRevLett.85.1452

@article{1677e799a013492ba2670ea7eb582434,

title = "Vibrational lifetime of bond-center hydrogen in crystalline silicon",

abstract = "The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.",

author = "M. Budde and G. L{\"u}pke and {Parks Cheney}, C. and Tolk, {N. H.} and Feldman, {L. C.}",

year = "2000",

month = aug

day = "14",

doi = "10.1103/PhysRevLett.85.1452",

language = "English",

volume = "85",

pages = "1452--1455",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "7",

}

TY - JOUR

T1 - Vibrational lifetime of bond-center hydrogen in crystalline silicon

AU - Budde, M.

AU - Lüpke, G.

AU - Parks Cheney, C.

AU - Tolk, N. H.

AU - Feldman, L. C.

PY - 2000/8/14

Y1 - 2000/8/14

N2 - The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

AB - The lifetime of localized vibrational modes (LVM) in a crystalline semiconductor was studied. Using transient bleaching spectroscopy, the lifetime of the stretch mode of bond-center H in Si was measured to be T1 = 7.8 ± 0.2 ps. Lifetimes of the Si-H stretch modes were strongly dependent on the structure of the defects.

UR - http://www.scopus.com/inward/record.url?scp=0343279083&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0343279083&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.85.1452

DO - 10.1103/PhysRevLett.85.1452

M3 - Article

AN - SCOPUS:0343279083

VL - 85

SP - 1452

EP - 1455

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 7

ER -

Access to Document

10.1103/PhysRevLett.85.1452