Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors

B. Sun, G. A. Shi, S. V.S. Nageswara Rao, M. Stavola, N. H. Tolk, S. K. Dixit, L. C. Feldman, G. Lüpke

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Abstract

Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.

Original languageEnglish
Article number035501
JournalPhysical review letters
Volume96
Issue number3
DOIs
Publication statusPublished - Jan 27 2006

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Sun, B., Shi, G. A., Nageswara Rao, S. V. S., Stavola, M., Tolk, N. H., Dixit, S. K., Feldman, L. C., & Lüpke, G. (2006). Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors. Physical review letters, 96(3), [035501]. https://doi.org/10.1103/PhysRevLett.96.035501