Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors

B. Sun, G. A. Shi, S. V S Nageswara Rao, M. Stavola, N. H. Tolk, S. K. Dixit, Leonard C Feldman, G. Lüpke

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Vibrational lifetimes of hydrogen and deuterium related bending modes in semiconductors are measured by transient bleaching spectroscopy and high-resolution infrared absorption spectroscopy. We find that the vibrational lifetimes follow a universal frequency-gap law; i.e., the decay time increases exponentially with increasing decay order, with values ranging from 1 ps for a one-phonon process to 265 ps for a four-phonon process. The temperature dependence of the lifetime shows that the bending mode decays by lowest-order multiphonon process. Our results provide new insights into vibrational decay and the giant isotope effect of hydrogen in semiconductor systems.

Original languageEnglish
Article number035501
JournalPhysical Review Letters
Volume96
Issue number3
DOIs
Publication statusPublished - Jan 27 2006

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life (durability)
decay
hydrogen
bleaching
isotope effect
infrared absorption
deuterium
absorption spectroscopy
infrared spectroscopy
temperature dependence
high resolution
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sun, B., Shi, G. A., Nageswara Rao, S. V. S., Stavola, M., Tolk, N. H., Dixit, S. K., ... Lüpke, G. (2006). Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors. Physical Review Letters, 96(3), [035501]. https://doi.org/10.1103/PhysRevLett.96.035501

Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors. / Sun, B.; Shi, G. A.; Nageswara Rao, S. V S; Stavola, M.; Tolk, N. H.; Dixit, S. K.; Feldman, Leonard C; Lüpke, G.

In: Physical Review Letters, Vol. 96, No. 3, 035501, 27.01.2006.

Research output: Contribution to journalArticle

Sun, B, Shi, GA, Nageswara Rao, SVS, Stavola, M, Tolk, NH, Dixit, SK, Feldman, LC & Lüpke, G 2006, 'Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors', Physical Review Letters, vol. 96, no. 3, 035501. https://doi.org/10.1103/PhysRevLett.96.035501
Sun, B. ; Shi, G. A. ; Nageswara Rao, S. V S ; Stavola, M. ; Tolk, N. H. ; Dixit, S. K. ; Feldman, Leonard C ; Lüpke, G. / Vibrational lifetimes and frequency-gap law of hydrogen bending modes in semiconductors. In: Physical Review Letters. 2006 ; Vol. 96, No. 3.
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