Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium

B. Sun, Q. Yang, R. C. Newman, B. Pajot, N. H. Tolk, L. C. Feldman, G. Lüpke

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

Time-resolved, transient bleaching spectroscopy was used to measure the lifetimes of the asymmetric stretch mode of interstitial isotopes 16O and 17O in Si. It was found that the 17O lies in the highest phonon density resulting in the shortest lifetime, by a calculation of the three-phonon density of states. It was also found that the lifetime of Ge is ten times longer than Si. According to the activity of phonon combinations, the interaction between the local modes and the lattice vibrations is discussed.

Original languageEnglish
Article number185503
Pages (from-to)185503-1-185503-4
JournalPhysical review letters
Volume92
Issue number18
DOIs
Publication statusPublished - May 7 2004

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium'. Together they form a unique fingerprint.

  • Cite this

    Sun, B., Yang, Q., Newman, R. C., Pajot, B., Tolk, N. H., Feldman, L. C., & Lüpke, G. (2004). Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium. Physical review letters, 92(18), 185503-1-185503-4. [185503]. https://doi.org/10.1103/PhysRevLett.92.185503