Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability

Leonard C Feldman, G. Lüpke, N. H. Tolk

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalSolid State Phenomena
Volume95-96
Publication statusPublished - 2004

Fingerprint

MOSFET devices
Silicon
silicon oxides
metal oxide semiconductors
Hydrogen
field effect transistors
life (durability)
Point defects
hydrogen
point defects
silicon
Defects
Deuterium
defects
molecular relaxation
atomic structure
deuterium
interstitials
Crystalline materials
Temperature

Keywords

  • Reliability
  • Si-H Defects

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability. / Feldman, Leonard C; Lüpke, G.; Tolk, N. H.

In: Solid State Phenomena, Vol. 95-96, 2004, p. 123-128.

Research output: Contribution to journalArticle

Feldman, Leonard C ; Lüpke, G. ; Tolk, N. H. / Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability. In: Solid State Phenomena. 2004 ; Vol. 95-96. pp. 123-128.
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