Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability

L. C. Feldman; G. Lüpke; N. H. Tolk

Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability

L. C. Feldman, G. Lüpke, N. H. Tolk

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

3 Citations (Scopus)

Abstract

The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.

Original language	English
Pages (from-to)	123-128
Number of pages	6
Journal	Solid State Phenomena
Volume	95-96
Publication status	Published - Jan 1 2004
Event	Gettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting - Brandenburg, Germany Duration: Sep 21 2003 → Sep 26 2003

Keywords

Reliability
Si-H Defects

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Materials Science(all)
Condensed Matter Physics

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abstract = "The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.",

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T1 - Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability

AU - Feldman, L. C.

AU - Lüpke, G.

AU - Tolk, N. H.

PY - 2004/1/1

Y1 - 2004/1/1

N2 - The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.

AB - The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.

KW - Reliability

KW - Si-H Defects

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M3 - Conference article

AN - SCOPUS:1642516012

VL - 95-96

SP - 123

EP - 128

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1662-9779

T2 - Gettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting

Y2 - 21 September 2003 through 26 September 2003

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