Abstract
The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.
| Original language | English |
|---|---|
| Pages (from-to) | 123-128 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 95-96 |
| Publication status | Published - Jan 1 2004 |
| Event | Gettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting - Brandenburg, Germany Duration: Sep 21 2003 → Sep 26 2003 |
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Keywords
- Reliability
- Si-H Defects
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Materials Science(all)
- Condensed Matter Physics
Cite this
Feldman, L. C., Lüpke, G., & Tolk, N. H. (2004). Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability. Solid State Phenomena, 95-96, 123-128.