Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability

L. C. Feldman, G. Lüpke, N. H. Tolk

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.

Original languageEnglish
Pages (from-to)123-128
Number of pages6
JournalSolid State Phenomena
Volume95-96
Publication statusPublished - Jan 1 2004
EventGettering and Defect Engineering in Semiconductor Technology GADEST 2003: Proceedings of the 10th International Autumn Meeting - Brandenburg, Germany
Duration: Sep 21 2003Sep 26 2003

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Keywords

  • Reliability
  • Si-H Defects

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Materials Science(all)
  • Condensed Matter Physics

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