Abstract
The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.
| Original language | English |
|---|---|
| Pages (from-to) | 123-128 |
| Number of pages | 6 |
| Journal | Solid State Phenomena |
| Volume | 95-96 |
| Publication status | Published - 2004 |
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Keywords
- Reliability
- Si-H Defects
ASJC Scopus subject areas
- Materials Science(all)
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability. / Feldman, Leonard C; Lüpke, G.; Tolk, N. H.
In: Solid State Phenomena, Vol. 95-96, 2004, p. 123-128.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Vibrational Lifetimes of Hydrogen and Silicon MOSFET Reliability
AU - Feldman, Leonard C
AU - Lüpke, G.
AU - Tolk, N. H.
PY - 2004
Y1 - 2004
N2 - The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.
AB - The vibrational lifetimes of various hydrogen (H) and deuterium (D) related point defects in bulk silicon (Si) and its relationship with the reliability of Si metal oxide semiconductor field effect transistor (MOSFET) were analyzed. The low-temperature lifetime of H at the bond-center site in crystalline Si was of the order of 10 ps. It was found that the lifetimes of interstitial-type defects were short. The strong dependence of lifetime on atomic structure of the defects show that the pseudo-localized modes were involved in the vibrational relaxation of Si-H bonds of the point defects in solids.
KW - Reliability
KW - Si-H Defects
UR - http://www.scopus.com/inward/record.url?scp=1642516012&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=1642516012&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:1642516012
VL - 95-96
SP - 123
EP - 128
JO - Solid State Phenomena
JF - Solid State Phenomena
SN - 1662-9779
ER -