Vibrational lifetimes of hydrogen in silicon

Isotope effects and MOSFET reliability

Gunter Lüpke, Baozhou Sun, Norman H. Tolk, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Characterization of defect and impurity reactions, dissociation and migration in semiconductors requires detailed understanding of rates and pathways of vibrational energy flow, of energy transfer channels and of coupling mechanisms between local modes and the phonon bath of the host material. Significant progress in reaching this goal has been accomplished in recent landmark studies exploring the excitation and dynamics of vibrational states associated with hydrogen in silicon. We describe recent experiments which measure the vibrational lifetime of the Si-H bond in various defect configurations and show the relationship between these lifetimes and silicon MOSFET reliability.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings
EditorsN.H. Nickel, M.D. McCluskey, S. Zhang
Pages33-41
Number of pages9
Volume813
Publication statusPublished - 2004
EventHydrogen in Semiconductors - San Francisco, CA, United States
Duration: Apr 13 2004Apr 15 2004

Other

OtherHydrogen in Semiconductors
CountryUnited States
CitySan Francisco, CA
Period4/13/044/15/04

Fingerprint

Silicon
Isotopes
Hydrogen
Defects
Energy transfer
Impurities
Semiconductor materials
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Lüpke, G., Sun, B., Tolk, N. H., & Feldman, L. C. (2004). Vibrational lifetimes of hydrogen in silicon: Isotope effects and MOSFET reliability. In N. H. Nickel, M. D. McCluskey, & S. Zhang (Eds.), Materials Research Society Symposium Proceedings (Vol. 813, pp. 33-41)

Vibrational lifetimes of hydrogen in silicon : Isotope effects and MOSFET reliability. / Lüpke, Gunter; Sun, Baozhou; Tolk, Norman H.; Feldman, Leonard C.

Materials Research Society Symposium Proceedings. ed. / N.H. Nickel; M.D. McCluskey; S. Zhang. Vol. 813 2004. p. 33-41.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lüpke, G, Sun, B, Tolk, NH & Feldman, LC 2004, Vibrational lifetimes of hydrogen in silicon: Isotope effects and MOSFET reliability. in NH Nickel, MD McCluskey & S Zhang (eds), Materials Research Society Symposium Proceedings. vol. 813, pp. 33-41, Hydrogen in Semiconductors, San Francisco, CA, United States, 4/13/04.
Lüpke G, Sun B, Tolk NH, Feldman LC. Vibrational lifetimes of hydrogen in silicon: Isotope effects and MOSFET reliability. In Nickel NH, McCluskey MD, Zhang S, editors, Materials Research Society Symposium Proceedings. Vol. 813. 2004. p. 33-41
Lüpke, Gunter ; Sun, Baozhou ; Tolk, Norman H. ; Feldman, Leonard C. / Vibrational lifetimes of hydrogen in silicon : Isotope effects and MOSFET reliability. Materials Research Society Symposium Proceedings. editor / N.H. Nickel ; M.D. McCluskey ; S. Zhang. Vol. 813 2004. pp. 33-41
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