Visualizing the metal-Mo S2 contacts in two-dimensional field-effect transistors with atomic resolution

Ryan J. Wu, Sagar Udyavara, Rui Ma, Yan Wang, Manish Chhowalla, Turan Birol, Steven J. Koester, Matthew Neurock, K. Andre Mkhoyan

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Two-dimensional MoS2 is an excellent channel material for ultrathin field-effect transistors, but high contact resistance across the deposited metal-MoS2 interface continues to limit its full realization. Using atomic-resolution scanning transmission electron microscopy and first-principles calculations, we showed that deposited metals with a high affinity for sulfur could have a fundamental limitation. Ti-MoS2 contact shows a destruction of the MoS2 layers, a formation of clusters and void pockets, and penetration of Ti into MoS2, resulting in many localized pinning states in the band gap. InAu-MoS2 contact shows that it is possible to achieve a van der Waals-type interface and dramatically reduced pinning states.

Original languageEnglish
Article number111001
JournalPhysical Review Materials
Volume3
Issue number11
DOIs
Publication statusPublished - Nov 8 2019

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

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    Wu, R. J., Udyavara, S., Ma, R., Wang, Y., Chhowalla, M., Birol, T., Koester, S. J., Neurock, M., & Mkhoyan, K. A. (2019). Visualizing the metal-Mo S2 contacts in two-dimensional field-effect transistors with atomic resolution. Physical Review Materials, 3(11), [111001]. https://doi.org/10.1103/PhysRevMaterials.3.111001