Visualizing the metal-Mo S2 contacts in two-dimensional field-effect transistors with atomic resolution

Ryan J. Wu, Sagar Udyavara, Rui Ma, Yan Wang, Manish Chhowalla, Turan Birol, Steven J. Koester, Matthew Neurock, K. Andre Mkhoyan

Research output: Contribution to journalArticle

Abstract

Two-dimensional MoS2 is an excellent channel material for ultrathin field-effect transistors, but high contact resistance across the deposited metal-MoS2 interface continues to limit its full realization. Using atomic-resolution scanning transmission electron microscopy and first-principles calculations, we showed that deposited metals with a high affinity for sulfur could have a fundamental limitation. Ti-MoS2 contact shows a destruction of the MoS2 layers, a formation of clusters and void pockets, and penetration of Ti into MoS2, resulting in many localized pinning states in the band gap. InAu-MoS2 contact shows that it is possible to achieve a van der Waals-type interface and dramatically reduced pinning states.

Original languageEnglish
Article number111001
JournalPhysical Review Materials
Volume3
Issue number11
DOIs
Publication statusPublished - Nov 8 2019

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Field effect transistors
field effect transistors
Metals
Contact resistance
contact resistance
Sulfur
metals
destruction
affinity
voids
Energy gap
sulfur
penetration
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Visualizing the metal-Mo S2 contacts in two-dimensional field-effect transistors with atomic resolution. / Wu, Ryan J.; Udyavara, Sagar; Ma, Rui; Wang, Yan; Chhowalla, Manish; Birol, Turan; Koester, Steven J.; Neurock, Matthew; Mkhoyan, K. Andre.

In: Physical Review Materials, Vol. 3, No. 11, 111001, 08.11.2019.

Research output: Contribution to journalArticle

Wu, Ryan J. ; Udyavara, Sagar ; Ma, Rui ; Wang, Yan ; Chhowalla, Manish ; Birol, Turan ; Koester, Steven J. ; Neurock, Matthew ; Mkhoyan, K. Andre. / Visualizing the metal-Mo S2 contacts in two-dimensional field-effect transistors with atomic resolution. In: Physical Review Materials. 2019 ; Vol. 3, No. 11.
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