Volatile, fluorine-free β-ketoiminate precursors for MOCVD growth of lanthanide oxide thin films

N. L. Edleman, J. A. Belot, J. R. Babcock, A. W. Metz, M. V. Metz, C. L. Stern, Tobin J Marks

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Lanthanide oxide thin films are of increasing scientific and technological interest to the materials science community. A new class of fluorine-free, volatile, low-melting lanthanide precursors for the metal-organic chemical vapor deposition (MOCVD) of these films has been developed. Initial results from a full synthetic study of these lanthanide-organic complexes are detailed.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.S. Ginley, J.D. Perkins, H. Kawazoe, D.M. Newns, A.B. Kozyrev
Pages371-376
Number of pages6
Volume623
Publication statusPublished - 2000
EventMaterials Science of Novel Oxide-Based Electronics - San Francisco, CA, United States
Duration: Apr 24 2000Apr 27 2000

Other

OtherMaterials Science of Novel Oxide-Based Electronics
CountryUnited States
CitySan Francisco, CA
Period4/24/004/27/00

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Edleman, N. L., Belot, J. A., Babcock, J. R., Metz, A. W., Metz, M. V., Stern, C. L., & Marks, T. J. (2000). Volatile, fluorine-free β-ketoiminate precursors for MOCVD growth of lanthanide oxide thin films. In D. S. Ginley, J. D. Perkins, H. Kawazoe, D. M. Newns, & A. B. Kozyrev (Eds.), Materials Research Society Symposium - Proceedings (Vol. 623, pp. 371-376)