Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films

Giovanni Fanchini, Husnu Emrah Unalan, Manish Chhowalla

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on electrical Raman measurements In transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external voltage results in downshifts of the D and G modes and in reduction of their intensity. The intensities of the radial breathing modes increase with external electric field related to the application of the external voltage in metallic SWNTs, while decreasing in semiconducting SWNTs. A model explaining the phenomenon in terms of both direct and indirect (Joule heating) effects of the field is proposed. Our work rules out the elimination of large amounts of metallic SWNTs in thin film transistors using high field pulses. Our results support the existence of Kohn anomalies in the Raman-active optical branches of metallic graphitic materials.

Original languageEnglish
Pages (from-to)1129-1133
Number of pages5
JournalNano letters
Volume7
Issue number5
DOIs
Publication statusPublished - May 1 2007

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films'. Together they form a unique fingerprint.

  • Cite this