Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films

Giovanni Fanchini, Husnu Emrah Unalan, Manish Chhowalla

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report on electrical Raman measurements In transparent and conducting single-wall carbon nanotube (SWNT) thin films. Application of external voltage results in downshifts of the D and G modes and in reduction of their intensity. The intensities of the radial breathing modes increase with external electric field related to the application of the external voltage in metallic SWNTs, while decreasing in semiconducting SWNTs. A model explaining the phenomenon in terms of both direct and indirect (Joule heating) effects of the field is proposed. Our work rules out the elimination of large amounts of metallic SWNTs in thin film transistors using high field pulses. Our results support the existence of Kohn anomalies in the Raman-active optical branches of metallic graphitic materials.

Original languageEnglish
Pages (from-to)1129-1133
Number of pages5
JournalNano Letters
Volume7
Issue number5
DOIs
Publication statusPublished - May 2007

Fingerprint

Carbon Nanotubes
Carbon nanotubes
carbon nanotubes
Thin films
Joule heating
Electric potential
electric potential
Thin film transistors
breathing
thin films
elimination
transistors
Electric fields
anomalies
conduction
electric fields
pulses

ASJC Scopus subject areas

  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Chemistry (miscellaneous)

Cite this

Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films. / Fanchini, Giovanni; Unalan, Husnu Emrah; Chhowalla, Manish.

In: Nano Letters, Vol. 7, No. 5, 05.2007, p. 1129-1133.

Research output: Contribution to journalArticle

Fanchini, Giovanni ; Unalan, Husnu Emrah ; Chhowalla, Manish. / Voltage-induced dependence of Raman-active modes in single-wall carbon nanotube thin films. In: Nano Letters. 2007 ; Vol. 7, No. 5. pp. 1129-1133.
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