VxIn(2-x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition

Robert F. McCarthy, Matthew S. Weimer, Richard T. Haasch, Richard D Schaller, Adam S. Hock, Alex B F Martinson

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Substitutional alloys of several thin film semiconductors have been proposed as intermediate band (IB) materials for use in next-generation photovoltaics, which aim to utilize a larger fraction of the solar spectrum without sacrificing significant photovoltage. We demonstrate a novel approach to IB material growth, namely atomic layer deposition (ALD), to allow unique control over substitutional-dopant location and density. Two new ALD processes for vanadium sulfide incorporation are introduced, one of which incorporates a vanadium(III) amidinate previously untested for ALD. Using this process, we synthesize the first thin film VxIn(2-x)S3 intermediate band semiconductors and further demonstrate that the V:In ratio, and therefore intraband gap density of states, can be finely tuned according to the ALD dosing schedule. Deposition on a crystalline In2S3 underlayer promotes the growth of a tetragonal β-In2S3-like phase VxIn(2-x)S3, which exhibits a distinct sub-band gap absorption peak with onset near 1.1 eV in agreement with computational predictions. However, the VxIn(2-x)S3 films lack the lower-energy transition predicted for a partially filled IB, and photoelectrochemical devices reveal a photocurrent response only from illumination with energy sufficient to span the parent band gap.

Original languageEnglish
Pages (from-to)2033-2040
Number of pages8
JournalChemistry of Materials
Volume28
Issue number7
DOIs
Publication statusPublished - Apr 26 2016

Fingerprint

Atomic layer deposition
Vanadium
Energy gap
Semiconductor materials
Thin films
Sulfides
Photocurrents
Lighting
Doping (additives)
Crystalline materials

ASJC Scopus subject areas

  • Materials Chemistry
  • Chemical Engineering(all)
  • Chemistry(all)

Cite this

McCarthy, R. F., Weimer, M. S., Haasch, R. T., Schaller, R. D., Hock, A. S., & Martinson, A. B. F. (2016). VxIn(2-x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition. Chemistry of Materials, 28(7), 2033-2040. https://doi.org/10.1021/acs.chemmater.5b04402

VxIn(2-x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition. / McCarthy, Robert F.; Weimer, Matthew S.; Haasch, Richard T.; Schaller, Richard D; Hock, Adam S.; Martinson, Alex B F.

In: Chemistry of Materials, Vol. 28, No. 7, 26.04.2016, p. 2033-2040.

Research output: Contribution to journalArticle

McCarthy, RF, Weimer, MS, Haasch, RT, Schaller, RD, Hock, AS & Martinson, ABF 2016, 'VxIn(2-x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition', Chemistry of Materials, vol. 28, no. 7, pp. 2033-2040. https://doi.org/10.1021/acs.chemmater.5b04402
McCarthy, Robert F. ; Weimer, Matthew S. ; Haasch, Richard T. ; Schaller, Richard D ; Hock, Adam S. ; Martinson, Alex B F. / VxIn(2-x)S3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition. In: Chemistry of Materials. 2016 ; Vol. 28, No. 7. pp. 2033-2040.
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