Abstract
We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.
| Original language | English |
|---|---|
| Article number | 191602 |
| Journal | Applied Physics Letters |
| Volume | 105 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - Nov 10 2014 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Water absorption in thermally grown oxides on SiC and Si : Bulk oxide and interface properties. / Liu, Gang; Xu, Can; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit; Feldman, Leonard C.
In: Applied Physics Letters, Vol. 105, No. 19, 191602, 10.11.2014.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Water absorption in thermally grown oxides on SiC and Si
T2 - Bulk oxide and interface properties
AU - Liu, Gang
AU - Xu, Can
AU - Yakshinskiy, Boris
AU - Wielunski, Leszek
AU - Gustafsson, Torgny
AU - Bloch, Joseph
AU - Dhar, Sarit
AU - Feldman, Leonard C
PY - 2014/11/10
Y1 - 2014/11/10
N2 - We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.
AB - We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.
UR - http://www.scopus.com/inward/record.url?scp=84922423595&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84922423595&partnerID=8YFLogxK
U2 - 10.1063/1.4901719
DO - 10.1063/1.4901719
M3 - Article
AN - SCOPUS:84922423595
VL - 105
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
M1 - 191602
ER -