Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Gang Liu, Can Xu, Boris Yakshinskiy, Leszek Wielunski, Torgny Gustafsson, Joseph Bloch, Sarit Dhar, Leonard C. Feldman

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Abstract

We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.

Original languageEnglish
Article number191602
JournalApplied Physics Letters
Volume105
Issue number19
DOIs
Publication statusPublished - Nov 10 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Liu, G., Xu, C., Yakshinskiy, B., Wielunski, L., Gustafsson, T., Bloch, J., Dhar, S., & Feldman, L. C. (2014). Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties. Applied Physics Letters, 105(19), [191602]. https://doi.org/10.1063/1.4901719