Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Gang Liu; Can Xu; Boris Yakshinskiy; Leszek Wielunski; Torgny Gustafsson; Joseph Bloch; Sarit Dhar; Leonard C. Feldman

doi:10.1063/1.4901719

Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Gang Liu, Can Xu, Boris Yakshinskiy, Leszek Wielunski, Torgny Gustafsson, Joseph Bloch, Sarit Dhar, Leonard C. Feldman

Rutgers University

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D₂O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D₂O exposure is proportional to the total D amount at the interface.

Original language	English
Article number	191602
Journal	Applied Physics Letters
Volume	105
Issue number	19
DOIs	https://doi.org/10.1063/1.4901719
Publication status	Published - Nov 10 2014

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.",

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AU - Liu, Gang

AU - Xu, Can

AU - Yakshinskiy, Boris

AU - Wielunski, Leszek

AU - Gustafsson, Torgny

AU - Bloch, Joseph

AU - Dhar, Sarit

AU - Feldman, Leonard C.

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AB - We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.

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Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties

Abstract

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