Water absorption in thermally grown oxides on SiC and Si

Bulk oxide and interface properties

Gang Liu, Can Xu, Boris Yakshinskiy, Leszek Wielunski, Torgny Gustafsson, Joseph Bloch, Sarit Dhar, Leonard C Feldman

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We combine nuclear reaction analysis and electrical measurements to study the effect of water exposure (D2O) on the n-type 4H-SiC carbon face (000 1¯) MOS system and to compare to standard silicon based structures. We find that: (1) The bulk of the oxides on Si and SiC behave essentially the same with respect to deuterium accumulation; (2) there is a significant difference in accumulation of deuterium at the semiconductor/dielectric interface, the SiC C-face structure absorbs an order of magnitude more D than pure Si; (3) standard interface passivation schemes such as NO annealing greatly reduce the interfacial D accumulation; and (4) the effective interfacial charge after D2O exposure is proportional to the total D amount at the interface.

Original languageEnglish
Article number191602
JournalApplied Physics Letters
Volume105
Issue number19
DOIs
Publication statusPublished - Nov 10 2014

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oxides
deuterium
water
nuclear reactions
electrical measurement
passivity
annealing
carbon
silicon

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Water absorption in thermally grown oxides on SiC and Si : Bulk oxide and interface properties. / Liu, Gang; Xu, Can; Yakshinskiy, Boris; Wielunski, Leszek; Gustafsson, Torgny; Bloch, Joseph; Dhar, Sarit; Feldman, Leonard C.

In: Applied Physics Letters, Vol. 105, No. 19, 191602, 10.11.2014.

Research output: Contribution to journalArticle

Liu, G, Xu, C, Yakshinskiy, B, Wielunski, L, Gustafsson, T, Bloch, J, Dhar, S & Feldman, LC 2014, 'Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties', Applied Physics Letters, vol. 105, no. 19, 191602. https://doi.org/10.1063/1.4901719
Liu G, Xu C, Yakshinskiy B, Wielunski L, Gustafsson T, Bloch J et al. Water absorption in thermally grown oxides on SiC and Si: Bulk oxide and interface properties. Applied Physics Letters. 2014 Nov 10;105(19). 191602. https://doi.org/10.1063/1.4901719
Liu, Gang ; Xu, Can ; Yakshinskiy, Boris ; Wielunski, Leszek ; Gustafsson, Torgny ; Bloch, Joseph ; Dhar, Sarit ; Feldman, Leonard C. / Water absorption in thermally grown oxides on SiC and Si : Bulk oxide and interface properties. In: Applied Physics Letters. 2014 ; Vol. 105, No. 19.
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