Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

Ruth A. Schlitz, Kunho Yoon, Lisa A. Fredin, Young Geun Ha, Mark A Ratner, Tobin J Marks, Lincoln J. Lauhon

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.

Original languageEnglish
Pages (from-to)3292-3297
Number of pages6
JournalJournal of Physical Chemistry Letters
Volume1
Issue number22
DOIs
Publication statusPublished - Nov 18 2010

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Electric breakdown
Transistors
transistors
breakdown
Annealing
annealing
electrical faults
Leakage currents
leakage
Weibull distribution
MIS (semiconductors)
Semiconductor devices
semiconductor devices
Self assembly
self assembly
Current density
Electronic equipment
Metals
current density
slopes

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors. / Schlitz, Ruth A.; Yoon, Kunho; Fredin, Lisa A.; Ha, Young Geun; Ratner, Mark A; Marks, Tobin J; Lauhon, Lincoln J.

In: Journal of Physical Chemistry Letters, Vol. 1, No. 22, 18.11.2010, p. 3292-3297.

Research output: Contribution to journalArticle

Schlitz, Ruth A. ; Yoon, Kunho ; Fredin, Lisa A. ; Ha, Young Geun ; Ratner, Mark A ; Marks, Tobin J ; Lauhon, Lincoln J. / Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors. In: Journal of Physical Chemistry Letters. 2010 ; Vol. 1, No. 22. pp. 3292-3297.
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