The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.
ASJC Scopus subject areas
- Materials Science(all)
- Physical and Theoretical Chemistry