Weibull analysis of dielectric breakdown in a self-assembled nanodielectric for organic transistors

Ruth A. Schlitz, Kunho Yoon, Lisa A. Fredin, Young Geun Ha, Mark A. Ratner, Tobin J. Marks, Lincoln J. Lauhon

Research output: Contribution to journalArticle

27 Citations (Scopus)


The effect of thermal annealing on leakage current and dielectric breakdown in self-assembled nanodielectric (SAND) metal-insulator-semiconductor (MIS) devices is investigated. Annealing at temperatures of 300 °C for 120 s in a reducing atmosphere significantly reduces the leakage current density at typical operating voltages (Vg = 3 V) while greatly narrowing the distribution of breakdown voltages. The threshold breakdown voltage is characterized by a Weibull distribution of slope 4.5 prior to thermal annealing, and by 12 post annealing. A comparison of the breakdown characteristics of conventional inorganic dielectrics with those of SAND demonstrates that self-assembly is a viable approach to fabricating highly reliable dielectric materials for unconventional electronics.

Original languageEnglish
Pages (from-to)3292-3297
Number of pages6
JournalJournal of Physical Chemistry Letters
Issue number22
Publication statusPublished - Nov 18 2010


ASJC Scopus subject areas

  • Materials Science(all)
  • Physical and Theoretical Chemistry

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