Wide-gap semiconducting graphene from nitrogen-seeded SiC

F. Wang, G. Liu, S. Rothwell, M. Nevius, A. Tejeda, A. Taleb-Ibrahimi, Leonard C Feldman, P. I. Cohen, E. H. Conrad

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

Original languageEnglish
Pages (from-to)4827-4832
Number of pages6
JournalNano Letters
Volume13
Issue number10
DOIs
Publication statusPublished - 2013

Fingerprint

Graphite
Graphene
graphene
Nitrogen
nitrogen
Energy gap
Electronic equipment
electronics
Carbon
carbon

Keywords

  • dopants
  • Graphene
  • graphite
  • graphite thin film
  • SiC
  • silicon carbide

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanical Engineering

Cite this

Wang, F., Liu, G., Rothwell, S., Nevius, M., Tejeda, A., Taleb-Ibrahimi, A., ... Conrad, E. H. (2013). Wide-gap semiconducting graphene from nitrogen-seeded SiC. Nano Letters, 13(10), 4827-4832. https://doi.org/10.1021/nl402544n

Wide-gap semiconducting graphene from nitrogen-seeded SiC. / Wang, F.; Liu, G.; Rothwell, S.; Nevius, M.; Tejeda, A.; Taleb-Ibrahimi, A.; Feldman, Leonard C; Cohen, P. I.; Conrad, E. H.

In: Nano Letters, Vol. 13, No. 10, 2013, p. 4827-4832.

Research output: Contribution to journalArticle

Wang, F, Liu, G, Rothwell, S, Nevius, M, Tejeda, A, Taleb-Ibrahimi, A, Feldman, LC, Cohen, PI & Conrad, EH 2013, 'Wide-gap semiconducting graphene from nitrogen-seeded SiC', Nano Letters, vol. 13, no. 10, pp. 4827-4832. https://doi.org/10.1021/nl402544n
Wang F, Liu G, Rothwell S, Nevius M, Tejeda A, Taleb-Ibrahimi A et al. Wide-gap semiconducting graphene from nitrogen-seeded SiC. Nano Letters. 2013;13(10):4827-4832. https://doi.org/10.1021/nl402544n
Wang, F. ; Liu, G. ; Rothwell, S. ; Nevius, M. ; Tejeda, A. ; Taleb-Ibrahimi, A. ; Feldman, Leonard C ; Cohen, P. I. ; Conrad, E. H. / Wide-gap semiconducting graphene from nitrogen-seeded SiC. In: Nano Letters. 2013 ; Vol. 13, No. 10. pp. 4827-4832.
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