Wide-gap semiconducting graphene from nitrogen-seeded SiC

F. Wang, G. Liu, S. Rothwell, M. Nevius, A. Tejeda, A. Taleb-Ibrahimi, L. C. Feldman, P. I. Cohen, E. H. Conrad

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

All carbon electronics based on graphene have been an elusive goal. For more than a decade, the inability to produce significant band-gaps in this material has prevented the development of graphene electronics. We demonstrate a new approach to produce semiconducting graphene that uses a submonolayer concentration of nitrogen on SiC sufficient to pin epitaxial graphene to the SiC interface as it grows. The resulting buckled graphene opens a band gap greater than 0.7 eV in the otherwise continuous metallic graphene sheet.

Original languageEnglish
Pages (from-to)4827-4832
Number of pages6
JournalNano letters
Volume13
Issue number10
DOIs
Publication statusPublished - Oct 18 2013

Keywords

  • Graphene
  • SiC
  • dopants
  • graphite
  • graphite thin film
  • silicon carbide

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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  • Cite this

    Wang, F., Liu, G., Rothwell, S., Nevius, M., Tejeda, A., Taleb-Ibrahimi, A., Feldman, L. C., Cohen, P. I., & Conrad, E. H. (2013). Wide-gap semiconducting graphene from nitrogen-seeded SiC. Nano letters, 13(10), 4827-4832. https://doi.org/10.1021/nl402544n