Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors

Dongyan Xu, Yuejun Kang, Manoj Sridhar, Anthony B. Hmelo, Leonard C Feldman, Dongqing Li, Deyu Li

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The authors report a sensing scheme to detect the translocation of small particles through a fluidic channel. The device connects the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a fluidic circuit and monitors the FET's drain current to detect particles. They demonstrate that amplification can be achieved from both the fluidic circuit and the MOSFET. The results show that a 0.7% volume ratio of the particle to the sensing microchannel can lead to 28%-56% modulation of the MOSFET's drain current. The minimum volume ratio detected is 0.006%, which is about ten times smaller than the lowest detectable volume ratio reported in the literature.

Original languageEnglish
Article number013901
JournalApplied Physics Letters
Volume91
Issue number1
DOIs
Publication statusPublished - 2007

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fluidic circuits
fluidics
metal oxide semiconductors
field effect transistors
oxides
sensors
microchannels
modulation

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors. / Xu, Dongyan; Kang, Yuejun; Sridhar, Manoj; Hmelo, Anthony B.; Feldman, Leonard C; Li, Dongqing; Li, Deyu.

In: Applied Physics Letters, Vol. 91, No. 1, 013901, 2007.

Research output: Contribution to journalArticle

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AU - Li, Deyu

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