Wide-spectrum, ultrasensitive fluidic sensors with amplification from both fluidic circuits and metal oxide semiconductor field effect transistors

Dongyan Xu, Yuejun Kang, Manoj Sridhar, Anthony B. Hmelo, Leonard C. Feldman, Dongqing Li, Deyu Li

Research output: Contribution to journalArticle

31 Citations (Scopus)


The authors report a sensing scheme to detect the translocation of small particles through a fluidic channel. The device connects the gate of a metal oxide semiconductor field effect transistor (MOSFET) with a fluidic circuit and monitors the FET's drain current to detect particles. They demonstrate that amplification can be achieved from both the fluidic circuit and the MOSFET. The results show that a 0.7% volume ratio of the particle to the sensing microchannel can lead to 28%-56% modulation of the MOSFET's drain current. The minimum volume ratio detected is 0.006%, which is about ten times smaller than the lowest detectable volume ratio reported in the literature.

Original languageEnglish
Article number013901
JournalApplied Physics Letters
Issue number1
Publication statusPublished - Nov 19 2007


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this