Abstract
The local structure of a Zn, Sn codoped In2 O3 thin film grown on c -plane sapphire by pulsed-laser deposition was examined by polarization-dependent x-ray absorption spectroscopy. The bixbyite film structure is both out-of-plane and in-plane oriented, and the structural results show that both Zn and Sn dopants occupy In sites. The In-O bond length is comparable to that in powder In2 O3. However, both Sn-O and Zn-O bonds have two distinct distances in the first shell. Some of the Zn dopants are undercoordinated and, accordingly, some isovalent Sn dopants are overcoordinated for charge balance. In addition, the results suggest that the aliovalent Sn dopants form Frank-Köstlin clusters, (2 Sn In Oi″) x, which provide enough charge carriers to explain the Hall measurements.
| Original language | English |
|---|---|
| Article number | 113524 |
| Journal | Journal of Applied Physics |
| Volume | 106 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2009 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
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X-ray absorption spectroscopy study of the local structures of crystalline Zn-In-Sn oxide thin films. / Proffit, D. E.; Buchholz, D. B.; Chang, Robert P. H.; Bedzyk, M. J.; Mason, Thomas O; Ma, Q.
In: Journal of Applied Physics, Vol. 106, No. 11, 113524, 2009.Research output: Contribution to journal › Article
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TY - JOUR
T1 - X-ray absorption spectroscopy study of the local structures of crystalline Zn-In-Sn oxide thin films
AU - Proffit, D. E.
AU - Buchholz, D. B.
AU - Chang, Robert P. H.
AU - Bedzyk, M. J.
AU - Mason, Thomas O
AU - Ma, Q.
PY - 2009
Y1 - 2009
N2 - The local structure of a Zn, Sn codoped In2 O3 thin film grown on c -plane sapphire by pulsed-laser deposition was examined by polarization-dependent x-ray absorption spectroscopy. The bixbyite film structure is both out-of-plane and in-plane oriented, and the structural results show that both Zn and Sn dopants occupy In sites. The In-O bond length is comparable to that in powder In2 O3. However, both Sn-O and Zn-O bonds have two distinct distances in the first shell. Some of the Zn dopants are undercoordinated and, accordingly, some isovalent Sn dopants are overcoordinated for charge balance. In addition, the results suggest that the aliovalent Sn dopants form Frank-Köstlin clusters, (2 Sn In Oi″) x, which provide enough charge carriers to explain the Hall measurements.
AB - The local structure of a Zn, Sn codoped In2 O3 thin film grown on c -plane sapphire by pulsed-laser deposition was examined by polarization-dependent x-ray absorption spectroscopy. The bixbyite film structure is both out-of-plane and in-plane oriented, and the structural results show that both Zn and Sn dopants occupy In sites. The In-O bond length is comparable to that in powder In2 O3. However, both Sn-O and Zn-O bonds have two distinct distances in the first shell. Some of the Zn dopants are undercoordinated and, accordingly, some isovalent Sn dopants are overcoordinated for charge balance. In addition, the results suggest that the aliovalent Sn dopants form Frank-Köstlin clusters, (2 Sn In Oi″) x, which provide enough charge carriers to explain the Hall measurements.
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U2 - 10.1063/1.3259385
DO - 10.1063/1.3259385
M3 - Article
AN - SCOPUS:72449161635
VL - 106
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 113524
ER -