YBa2Cu3O7-δ on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application

K. A. Dean, D. B. Buchholz, L. D. Marks, Robert P. H. Chang, B. V. Vuchic, K. L. Merkle, D. B. Studebaker, Tobin J Marks

Research output: Contribution to journalArticle

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Abstract

MgO films and YBa2Cu3O7-δ/MgO multilayer films were developed with the pulsed organometallic beam epitaxy (POMBE) growth technique, and grain boundary junctions were fabricated from the films to demonstrate the utility of the multilayers. High-quality MgO films were grown on LaAlO3 substrates by POMBE using a Mg(dpm)2 precursor. MgO crystallinity, as assessed by x-ray diffraction rocking curves, improved with the use of CuOx or YBa2Cu3O7-δ buffer layers. YBa2Cu3O7-δ films grown on the MgO layer by POMBE exhibited a Tc0 of 83 K and a Jc (12 K) exceeding 106 A/cm2 for applied magnetic fields up to 3 × 104 G. Grain boundary junctions were formed by growing YBa2Cu3O7-δ on MgO films that had been pretreated with a simple sputtering technique. This sputtering induces a controlled, 45° grain boundary in subsequently deposited YBa2Cu3O7-δ films. The resulting boundary showed weak-link current-voltage behavior and an IcRn product of 52 μV at 10 K, demonstrating that sputter-induced grain boundary junctions are compatible with multilayer technology.

Original languageEnglish
Pages (from-to)2700-2707
Number of pages8
JournalJournal of Materials Research
Volume10
Issue number11
Publication statusPublished - Nov 1995

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Organometallics
Epitaxial growth
epitaxy
Grain boundaries
grain boundaries
Sputtering
Multilayers
sputtering
Multilayer films
Buffer layers
barium copper yttrium oxide
Diffraction
crystallinity
Magnetic fields
x ray diffraction
buffers
X rays
Electric potential
Substrates
electric potential

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

YBa2Cu3O7-δ on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application. / Dean, K. A.; Buchholz, D. B.; Marks, L. D.; Chang, Robert P. H.; Vuchic, B. V.; Merkle, K. L.; Studebaker, D. B.; Marks, Tobin J.

In: Journal of Materials Research, Vol. 10, No. 11, 11.1995, p. 2700-2707.

Research output: Contribution to journalArticle

Dean, KA, Buchholz, DB, Marks, LD, Chang, RPH, Vuchic, BV, Merkle, KL, Studebaker, DB & Marks, TJ 1995, 'YBa2Cu3O7-δ on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application', Journal of Materials Research, vol. 10, no. 11, pp. 2700-2707.
Dean, K. A. ; Buchholz, D. B. ; Marks, L. D. ; Chang, Robert P. H. ; Vuchic, B. V. ; Merkle, K. L. ; Studebaker, D. B. ; Marks, Tobin J. / YBa2Cu3O7-δ on MgO films grown by pulsed organometallic beam epitaxy and a grain boundary junction application. In: Journal of Materials Research. 1995 ; Vol. 10, No. 11. pp. 2700-2707.
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