Zinc doping in cosubstituted In2-2xSnxZnxO3-δ

A. Ambrosini, S. Malo, Kenneth R Poeppelmeier, M. A. Lane, C. R. Kannewurf, Thomas O Mason

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.

Original languageEnglish
Pages (from-to)58-63
Number of pages6
JournalChemistry of Materials
Volume14
Issue number1
DOIs
Publication statusPublished - 2002

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Zinc
Doping (additives)
Vacancies
Anions
Carrier concentration
Solid solutions
Substitution reactions
Negative ions
Oxygen

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

Cite this

Zinc doping in cosubstituted In2-2xSnxZnxO3-δ. / Ambrosini, A.; Malo, S.; Poeppelmeier, Kenneth R; Lane, M. A.; Kannewurf, C. R.; Mason, Thomas O.

In: Chemistry of Materials, Vol. 14, No. 1, 2002, p. 58-63.

Research output: Contribution to journalArticle

Ambrosini, A. ; Malo, S. ; Poeppelmeier, Kenneth R ; Lane, M. A. ; Kannewurf, C. R. ; Mason, Thomas O. / Zinc doping in cosubstituted In2-2xSnxZnxO3-δ. In: Chemistry of Materials. 2002 ; Vol. 14, No. 1. pp. 58-63.
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N2 - The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.

AB - The cosubstituted solid solution In2-2xSnxZnxO3-δ was acceptor-doped with Zn2+ to form In2-x-ySnxZnyO3-δ (y > x). A 4% Zn2+ "excess" can be introduced in In1.6Sn0.2Zn0.2O3-δ while maintaining the bixbyite structure. The n-type conductivity of the doped material decreases with zinc substitution. Zn-doped In1.6Sn0.2Zn0.2O3-δ was annealed under high oxygen pressure (∼170 atm) to eliminate anion vacancies, VO••. Owing to a decrease in carrier concentration by up to 2 orders of magnitude from 1020 to 1018 carriers/cm3, the conductivity of the annealed material decreases. Hall measurements show that the carriers remain as n-type. The results imply the existence of neutral Zn-VO•• complexes that prevent the donation of holes by Zn2+.

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