Zinc oxide nanowire networks for macroelectronic devices

Husnu Emrah Unalan, Yan Zhang, Pritesh Hiralal, Sharvari Dalal, Daping Chu, Goki Eda, K. B.K. Teo, Manish Chhowalla, William I. Milne, Gehan A.J. Amaratunga

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47 Citations (Scopus)

Abstract

Highly transparent zinc oxide (ZnO) nanowire networks have been used as the active material in thin film transistors (TFTs) and complementary inverter devices. A systematic study on a range of networks of variable density and TFT channel length was performed. ZnO nanowire networks provide a less lithographically intense alternative to individual nanowire devices, are always semiconducting, and yield significantly higher mobilites than those achieved from currently used amorphous Si and organic TFTs. These results suggest that ZnO nanowire networks could be ideal for inexpensive large area electronics.

Original languageEnglish
Article number163501
JournalApplied Physics Letters
Volume94
Issue number16
DOIs
Publication statusPublished - May 6 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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  • Cite this

    Unalan, H. E., Zhang, Y., Hiralal, P., Dalal, S., Chu, D., Eda, G., Teo, K. B. K., Chhowalla, M., Milne, W. I., & Amaratunga, G. A. J. (2009). Zinc oxide nanowire networks for macroelectronic devices. Applied Physics Letters, 94(16), [163501]. https://doi.org/10.1063/1.3120561